High-sensitivity photodetection covering a large spectral range from the UV to IR is dominated by photodiodes. To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new device architectures and material systems are …

2017年2月8日 · Here we demonstrate a photovoltage field-effect transistor that uses silicon for charge transport, but is also sensitive to infrared light owing to the use of a quantum dot light absorber.

The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of …

• It is a transistor controlled by exposure to light. It is similar to photodiode controlling an ordinary bipolar transistor. • It can be either bipolar transistor or field effect transistor (FET). • Its body is encased in resin or plastic or encased in a metal shell with window in it.

2017年10月4日 · Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from …

2023年1月1日 · In 2017, a photo-voltage field-effect transistor (FET) is proposed to enable an efficiently responsive and fast detection of light at wavelengths longer than 1100 nm. The FET is composed of a p-Si as the conduction channel and an n-type colloidal quantum dots (CQDs) as the infrared light absorber [17].

2022年11月30日 · In this work, a “photo-driven” semi-metal–semiconductor field-effect transistor (photo-sMESFET), based on graphene/silicon-on-insulator hybrid structure, is proposed and demonstrated to realize the synchronous optimization of gain, response speed, and dark current.

Phototransistors are semiconductor -based photodetectors. One needs to distinguish the common bipolar devices from field effect phototransistors (photoFETs); both types are discussed in the following, although the former one is much more common.

2023年7月9日 · photofet是photofieldeffecttransistor的缩写，中文叫光场效应晶体管或光场效应管。 是一种利用光照来控制场效应晶体管（FET）的导通状态的器件，类似于光敏三极管。 photofet的结构是在FET的栅极和沟道之间形成一个光敏的pn结，有光照射到这个结时，会产生电子-空穴对，改变栅极和沟道之间的电阻，进而影响漏极和源极之间的电流。 photofet有两种工作模式：零偏压模式和反向偏压模式。 在零偏压模式下，栅极和源极之间没有外加电压，当有光 …

The CMOS image sensor, which incorporates a silicon photodiode array and a signal processor on a chip, or in a multi-die stack, has become an indispensable part of our daily lives. While its dominance in digital image capture will foreseeably continue, research with future outlooks is actively searching for new optoelectronic devices, alternative to …