Low Voltage 40-Gb/s Ge PIN Photodetector - IEEE Xplore
We report on lateral pin and vertical pin germanium (Ge) photodetectors selectively grown at the end of silicon waveguides. The responsivities of the two types of devices at 1550 nm were …
Near-infrared germanium PIN-photodiodes with >1A/W …
2025年1月1日 · Here we present a nanoengineered PIN-photodiode made of CMOS-compatible germanium (Ge) that achieves a verified external quantum efficiency (EQE) above 90% over a …
High-speed interdigitated Ge PIN photodetectors - IEEE Xplore
We report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p/sup +/ - and n/sup +/ -fingers that were formed by ion implantation into a Ge substrate. The 3-dB …
Ge 锗 超大光敏PIN光电二极管（800-1800nm 直径 10mm）
筱晓光子库存备有各种有效面积和封装的PIN结二极管 (PD)，包括铟镓砷 (InGaAs)、磷化镓 (GaP)、硅 (Si)和锗 (Ge)光电二极管。 我们有高速硅光电二极管。 也有在900到2600 nm的范 …
美国AIM Photonics教程|硅基光电子技术的光电探测器原理入门与 …
不过，最流行的方法是使用外延锗（Ge），它在电信波段具有吸收性，与 CMOS 兼容，可提供小型、快速、响应灵敏和低功耗的探测器。 PIN 二极管基础知识 PIN 二极管是一种在 p 型和 n …
Ge/Si PIN光电探测器 - SiFotonics
Ge/Si PIN光电探测器是用于光通信接收端的光电转换器件，其基于8英寸CMOS工艺制作，使用硅基外延生长的纯锗作为光吸收材料，可以对450nm~1550nm波长范围的光产生吸收。
Ge/Si PIN - SiFotonics
Ge-on-Si PIN photodiode converts optical signal to electrical signal at receiver side of optical communication. The absorption material is germanium (Ge) hetero-epitaxial grown on silicon …
A High Performance Ge PIN Photodiode Compatible with High …
A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 …
锗 Ge 大光敏面PIN光电二极管 近红外 800-1800nm
Ge 锗 大光敏PIN光电二极管（800-1800nm 直径 5mm） 筱晓光子库存备有各种有效面积和封装的PIN结二极管(PD)，包括铟镓砷(InGaAs)、磷化镓(GaP)、硅(Si)和锗(Ge)光电二极管。
High bandwidth Ge p-i-n photodetector integrated on Si
2006年8月18日 · For a Ge p-i-n photodetector with a radius of 5 μ m a 3 dB bandwidth of 25 GHz is measured at an incident wavelength of 1.55 μ m and zero external bias. For a modest …
- 某些结果已被删除