本产品应用于单模910nm至1650nm波长50Gbps及以上速率长波长光接收机。 特征. Φ20μm有效面积。 地-信号-地（GSG）焊盘结构，4X25G阵列。 低暗电流、低电容、高响应度。 数据速率：≥25Gbps/通道。 芯片间距：750μm。 1001111111111 测试和检验。 卓越的可靠性：所有芯片均通过了Telcordia -GR-468-CORE规定的资格要求。 符合RoHS2.0（2011/65/EU）。 应用. IEEE 100千兆以太网。 100G（4X25Gbps）链路。

为了和850nm VCSEL 12.5Gbps芯片配套，新亮光子同时自主研发的850nm 数据通信 PIN PD芯片，传输速率15Gbps，此款探测器芯片专为850nm数据传输波长设计，具有响应度高，暗电流低的特点，也是提供1x1, 1x4, 1x8, 1x12, 1x16单点和阵列，对应850nm VCSEL阵列，而且阵列的间距 …

Use these 13XX nm photodiode array chips in pluggable transceivers configured for 28 Gbps NRZ or 56 Gbps PAM4, and benefit from their low dark current and high reliability. These compact 1X4 chips feature topside G-S-G pads making them very easy to integrate in …

100 Gbps PAM4 1x8/1x4 500 µm Pitch PIN Photodiode Array Chip Typical S22-Smith Chart Extracted Typical Parameters from S22 Appendix: Small Signal Equivalent Circuit Model

The Broadcom® AFCD-P84HS is an InGaAs-based 1x4 PIN photodiode array offering high responsivity, low dark current, and low capacitance for high- bandwidth, high- performance optical receiver designs. ... Pin & Photodetector (PD) AFCD-P84HS; Print; Share Page. LinkedIn. Twitter. Facebook. Gmail. ... StumbleUpon. Telegram.me. Weibo. AFCD-P84HS ...

在配置为 28 Gbps NRZ 或 56 Gbps PAM4 的可插拔收发器中使用这些 13XX nm 光电二极管阵列芯片，并受益于其低暗电流和高可靠性。 这些紧凑的 1X4 芯片采用顶部 G-S-G 焊盘，因此可 …

GCS GaAs PIN Photodiodes for 10Gb/s 1x4, 1x8, 1x12 Array Applications 850 nm GaAs PIN PD • Mesa Diode on Semi-Insulating Substrates • Anode/Cathode Bonding Pads on Front Side • Low Dark Current & Capacitance with High Responsivity • Bandwidths up to 10 GHz • Customer Specified Configurations Available Applications • 850nm 10G 1x4 ...

data rate digital PIN photodiode chip, active area size is Φ20μm. Its features is high, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X25Gbps quad channel transimpedance amplifiers(TIA), application in long wavelength applications, high date rate up

25Gbps Long Wavelength InGaAs PIN PD P/N: DO435_20um_C3 (1x4 array) The D0435_20um_C3 products are high-front side illuminated InGaAs arrays that feature low capacitance, high responsivity, low dark current and excellent reliability. Designed with a 20µm detection window and 500um die-to-die pitch, these products are tailored

The Broadcom BPD3056-4 is a mesa-structured, 1×4 array, InGaAs-based PIN photodiode array offering high responsivity, low dark current, and low capacitance for high-bandwidth, high-performance optical receiver designs.