PMGI and LOR resists enable high yield, metal lift-off processing in a variety of applications from data storage and wireless ICs, to MEMS. Used beneath photoresists in a bi-layer stack, PMGI and LOR extend the limits of lift-off processing beyond where single layer resist strategies can reach.

LOR and PMGI resists are designed for applications requiring high resolution imaging, easy process tuning, high yields and superior deposition line width control. Mainstream applications utilizing LOR or PMGI resists include GMR & MR heads, wireless devices, opto-electronics, MEMs, and packaging. Sub 0.25μm lift-off processing.

LOR and PMGI lift-off resists are based on polydimethylglutarimide (PMGI) polymers and are well suited for a variety of critical and non-critical level lift-off processes, and as sacrificial release layers. Used as under layers in combination with conventional positive and negative resists, these

a) PMGI: SF-11 (thickness≅1.5 µm) Process Steps: • Sample Solvent Clean: acetone (2 minutes), methanol (1 minute) in ultrasonic machine. • Sample Dehydration Bake: @200 C for 1 minute. • Coat SF-11 Resist: spinning speed of 4000 rpm (rotation per minute) for 30 seconds. • Pre-Exposure-Bake: @200 C for 2 minutes.

PMGI resists are designed to produce low defect coatings over a broad range of film thicknesses using a variety of spin coat conditions. The film thickness versus spin speed plots displayed in Figures 1 through 3 provide the information required to select the appropriate PMGI resist and spin conditions to obtain the desired film thickness.

LOR / PMGI series. Unique Features. No intermixing when over-coated with most top imaging resists; Single step development of bi-layer stack in TMAH or KOH developers; Quick and clean removal in conventional resist strippers; High resolution metallization (< 0.25 μm)

2020年10月21日 · The PMGI SF Series of resist is widely used in multilayer DUV flood exposure processes for lift-off applications, but is also suitable for single layer or multilayer e-beam and x-ray use. It is used in planarization schemes, thin film head metallization, T-gate processes, air-bridge construction, microelectromechanical device fabrication, and ...

: PMGI SF Series Resists sp. Grav. wt.) VOC(g/L) SFI SF2 SF3 SF4 SF5 SF6 SF7 SF7.5 SF8 SFC) SFIO SFII SF12 SF13 SF14 SF15 SF17 SF19 SF23 Gi13101 102 Gli3103 Gl 13104 Gl 105 Chi 13106 Gl 13 107 Gi13175 13108 Gli3109 Gli3110 (5113111 Gi13112 CGI 13113 Gli3114 (3113115 CGI 13117 Gli3119 Gi13123 0.966 0.968 0.970 0.973 0.975 0.980 0.981 0.983 0.984

2023年12月19日 · 作者提出了一种基于【梯度和强度的比例维持】（proportional maintenance of gradient and intensity，PMGI）的【端到端】的【多任务图像融合】网络。 图像融合问题可以统一视为源图像【梯度】【强度】的比例维护问题。

2024年8月1日 · This process is intended for Deep-UV Exposure on the ASML DUV Stepper. PMGI is used as the underlayer, which is exposed at the same time as the imaging resist. Adjust spin speed or switch to a different PMGI formulation to tailor the underlayer thickness to your desired metal thickness.