The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz.
RF Power LDMOS transistor for frequencies up to 1.5 GHz
The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB and C for all typical modulation formats.
ST50V10100 Datasheet (PDF) - STMicroelectronics
effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB and C for all typical modulation formats. Applications • Industrial, scientific and medical from HF to 1.5 GHz • Avionics
The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 10100 A-1234569917
ST50V10100 STMicroelectronics | Mouser
ST50V10100 STMicroelectronics RF MOSFET Transistors RF Power LDMOS transistor for frequencies up to 1.5 GHz datasheet, inventory, & pricing.
PTF10100 datasheet, transistor equivalent, Ericsson
The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization.
ATF-10100 datasheet - 0.5-12 GHZ Low Noise Gallium Arsenide Fet
ATF-10100 0.5-12 GHZ Low Noise Gallium Arsenide Fet . Features. Low Noise Figure: 0.5 dB Typical at 4 GHz Low Bias: VDS 2 V, IDS = 25 mA High Associated Gain: 14.0 dB Typical at 4 GHz High Output Power: 21.0 dBm Typical at 4 GHz. chip. Its premium noise figure makes this device appropriate
UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM. February 2003 . 1 2. ABSOLUTE MAXIMUM RATINGS.
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