
SiC Epitaxial CVD system Probus-SiC™ Series - Tokyo Electron Ltd.
The Probus-SiC™ series is an automated SiC epitaxial film growth equipment developed by incorporating state-of-the-art technologies such as vacuum technology, transfer technology and high-temperature control technology that TEL has cultivated in the semiconductor manufacturing equipment market.
SiCエピタキシャル Probus-SiC™シリーズ | 製品・サービス(製 …
Probus-SiC™は、3/4/6インチSiC基板対応のSiCエピタキシャル成膜装置です。 ウェーハの複数搭載が可能なセミバッチ方式のプロセスモジュールを2基搭載する拡張性を持ち、開発から量産まで目的に合わせた装置構成を選択することが可能です。
Synthex Probus EP Gear Oil ISO VG 680
SYNTHEX PROBUS EXTREME PRESSURE (EP) GEAR OIL ISO 680 is formulated with highly-refined paraffinic base stocks plus extreme pressure performance additives specially designed to impart enhanced film strength.
Probus — Synthex
From spindle oil to gear and way lube, PROBUS offers a versatile product portfolio suitable for various applications in industrial settings. Engineered with precision and expertise, our lubricants ensure optimal performance and protection for your machinery.
SiC Power Device | 製品・サービス(半導体製造プロセスから探 …
Probus-SiC™ 75~150mm用SiCパワー半導体製造向けSiCエピタキシャル成膜装置。 真空下高温制御等の最先端技術を導入し優れた膜厚・濃度均一性を実現。
WO2017047350A1 - SiCエピタキシャルウェハ、SiCエピタキ …
the epitaxial growth apparatus used is an induction heating horizontal hot wall CVD apparatus (Probus-SiC (registered trademark) manufactured by Tokyo Electron). the gases used are SiH 4...
SiC Power Device | Products and Services ... - Tokyo Electron Ltd.
Probus-SiC™ Epitaxial reactor to grow SiC on 75-150mm substrates used in SiC power semiconductor devices. Incorporating state-of-the-art technologies such as high temperature control under vacuum achieves excellent uniformity in thickness and dopant concentration.
Synthex Probus EP Gear Oil ISO VG 460
SYNTHEX PROBUS EXTREME PRESSURE (EP) GEAR OIL 460 is formulated with highly-refined paraffinic base stocks plus extreme pressure performance additives specially designed to impart enhanced film strength.
In Japan, Tokyo Electron Limited (TEL) has the Probus CVD system for SiC epitaxy on substrates up to 6-inch diameter. The system can be configured with two process chambers. An auto-loader can also be added. Infineon bought a TEL tool in early 2012 for mass pro-duction of advanced SiC power devices. Epitaxy and substrate producer
TEL silicon carbide (SiC) epitaxy tool ordered by Infineon
The Probus-SiC grows advanced films on 6" and smaller wafers. It boasts automatic transfer and multi-reactor functions. The tool is designed to maintain uniformity and low defect density in high-throughput volume production.
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