2021年5月9日 · 模拟 CMOS集成电路 设计之 带隙基准 （Behzad Razavi） 电流镜和参考源 - 百度文库. Chapter 14: Voltage References. PTAT - Proportional to Absolute Temperature. CTAT - Complementary to Absolute Temperature

Abstract—A low-voltage, ultra-low-power sub-threshold pro-portional to absolute temperature (PTAT) current source is proposed. The new topology generates the PTAT current from the ratio between the drain currents of two transistors in subthreshold operation. Linearity is analyzed and a compensation strategy to improve it is developed.

我们知道，带隙基准既可以产生基准电压也可以产生基准电流，且温度系数都很小。 但是如果不用带隙基准产生电流，而是用 PTAT电流源，也可以。 无论是带隙还是PTAT电流源，都需要启动电路。 拉扎维 上有一个经典的电流源电路，在实际也是广泛应用，如下图： 乍一看，这两个电路区别不大，但确是一个能用，一个不能用 。 大家能不能一眼看出来哪个是实际可用的，哪个是错误的连接 ？ 答案是左边的是正确的，右边的是错误的。 为什么呢？ 下面 作者君给大家详细分 …

2010年10月21日 · A low-voltage, ultra-low-power sub-threshold proportional to absolute temperature (PTAT) current source is proposed. The new topology generates the PTAT current from the ratio between the drain currents of two transistors in subthreshold operation. Linearity is analyzed and a compensation strategy to improve it is developed.

Compatibility with CMOS Technology • In CMOS technologies, where the independent bipolar transistors are not available, parasitic bipolar transistors are used. • Realization of PTAT voltage from the difference of the source-gate voltages of two MOS transistors biased in weak inversion is also reported in the literature.

The CMOS PTAT topologies are analytically described and design methodologies for PTAT circuits in subthreshold are presented. The compromises between design conditions and resulting performance are evaluated through simulation for these three PTAT generators, including linearity with temperature, temperature coefficient (TC), and variability ...

2003年1月6日 · Presents a new all-MOS circuit technique for very-low-voltage proportional-to-absolute temperature (PTAT) references. Optimization of supply scaling below the sum of threshold voltages is based on log companding and implemented by operating the MOSFET in …

In developing temperature independent voltages, it is useful to show how to generate PTAT currents. A straight-forward method is to superimpose VPTAT across a resistor as shown: Because R is always dependent on temperature, this current is called a pseudo-PTAT current and is designated by IPTAT’.

Abstract: Two main reasons for variation of current output of current source are temperature depen-dency and process dependency of output current. Therefore in current references we try to com-pensate these two major factors. This paper reviews some important current reference in bipolar and CMOS technolgy. voltage-mode counterpart.

2023年11月21日 · This paper presented a PTAT sensor designed and manufactured entirely using CMOS technology. The sensor operation was tested in the wide range of temperature values. The measurements carried out for several specimens of manufactured circuits confirmed the proper sensor operation.