PVT法的提出成为SiC晶体生长历史上的里程碑事件，使制备满足工业需求的大尺寸高质量的SiC晶体变得可能，也是目前市场中主流的技术方法。 SiC晶体生长方法简介 SiC的本身特性决定了其单晶生长难度较大。

2024年11月26日 · In this study, we aimed to develop the PVT process for SiC single crystal growth using CVD-SiC source material by employing crushed CVD-SiC blocks of various sizes. We designed the hot zone structure through simulations and applied size-classified crushed CVD-SiC blocks as the source material.

目前,业界已经开发出多种sic长晶方法,包括:物理气相传输法(pvt)、高温化学气相沉积法(htcvd)、液相法(lpe)、高温溶液法 等,其中pvt法是目前最为广泛采用的sic长晶方式。

碳化硅单晶衬底材料（Silicon Carbide Single Crystal Substrate Materials，以下简称SiC衬底）也是晶体材料的一种，属于宽禁带半导体材料，具有耐高压、耐高温、高频、低损耗等优势，是制备大功率电力电子器件以…

2021年12月18日 · Physical vapor transport (PVT) is the main method for growing a large-size SiC single crystal, which needs to be cost-effective and defect-free. SiC powder is used as the source material during the PVT growth of a SiC single crystal [7].

Physical Vapor Transport (PVT) is a widely used method for the growth of compound semiconductor single crystals such as silicon carbide (SiC) or aluminum nitride (AlN). It is highly favored for its ability to produce high-purity and defect-free crystals.

2022年12月15日 · The PVT technology is the most well-developed 4H-SiC growth technique, due to the advantages of the sensitive-temperature tunability, and low cost of the solid raw materials. At present, PVT-grown 150 mm 4H-SiC single crystals have been widely industrialized, lab-scale 200 mm 4H-SiC single crystals have already been realized [4].

碳化硅 (SiC) 外延炉是专为生产和制备 SiC 外延片而设计的核心设备。 本示例模型演示基于物理气相传输 (PVT) 法制备 SiC 外延片的过程。 通过感应线圈加热 SiC 粉末，当温度达到特定值后，粉末开始升华。

6 天之前 · 其中，pvt法是已发展较为成熟，更适用于sic产业化批量生产的方法。 早期，主流的PVT法主要采用中频感应加热设备，但近年来电阻加热式PVT系统逐渐崭露头角，并在8英寸SiC晶体生长中逐渐展现出显著优势——

2023年11月26日 · In this study, numerical simulation tools were used to model the thermal field of SiC single crystal growth using the resistance heating PVT method. Through adjusting the relative position of the heater, adjusting the crucible and insulation structure, and setting up dual heaters, the temperature field distribution patterns under different ...