In this work, a high performance GaN-on-Si quasi vertical PiN diode was demonstrated by the combination of a beveled sidewall and self-aligned fluorine plasma treatment. The didoes achieved a remarkable breakdown voltage ( VBR) of 930 V …

930V and low-leakage current GaN-on-Si quasi-vertical PiN diode with beveled-sidewall treated by self-aligned fluorine plasma

2025年1月2日 · In order to reduce the reverse leakage current of gallium nitride (GaN) p-i-n diode and improve the switching ratio of the device, the preparation process of GaN based quasi-vertical p-i-n diode was optimized from three aspects.

2024年11月29日 · In GaN-on-Si quasi-vertical PiN diodes, the edges of a P-N junction are located on the sidewalls. This can cause electric field crowding, leading to premature breakdown of the device. Therefore, mitigating the peak electric field at the sidewall is an effective method for improving the reverse characteristics of GaN-on-Si quasi-vertical PiN diodes.

Abstract: In this work, we show a GaN-on-Si quasi vertical PiN diode via the combination of stepped sidewall and fluorine plasma treatment. We achieved a 43.2% increase in breakdown voltage (V BR). Meanwhile, the off-state leakage is greatly reduced.

2024年11月29日 · In this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system. The leakage current and breakdown voltage of the diode are systematically studied.

2020年7月7日 · GaN-based quasi-vertical PIN diodes are grown on insulating sapphire substrates, and thus both the n-electrode and the p-electrode are made on the same side, which causes lateral current injection ...

High Power “Quasi-Active” Surface Mount PIN Diode Limiter. The LM102202-Q-x-301 Surface Mount Silicon PIN Diode Limiter is a surface mount, passive two-stage power limiter which can operate over the frequency range of 1 to 2 GHz.

In this work, we demonstrate quasi-vertical GaN-on-Si PIN diodes with high performance and linear breakdown voltage scaling with the drift layer thickness. Fully vertical PIN diodes have also been fabricated yielding similar breakdown field and potentially even lower on-resistances Ron.

With a 4 μm -thick drift layer, we achieved an excellent breakdown voltage of 820 V and ultra-low specific on resistance ( Ron,sp ) of 0.33 mΩ cm 2. This results in a BFOM of 2.0 GW/cm 2, the highest value reported for GaN-on-Si vertical diodes. These results reveal the excellent prospect of GaN-on-Si for cost-effective vertical power devices.