The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs.

4 天之前 · This article presents a fully integrated 75–100 GHz element-level in-band full-duplex (IBFD) front-end MMIC. The MMIC is implemented in a 40-nm HEMT GaN-on-SiC process and consists of a tunable passive quasi-circulator (PQC), power amplifier (PA), and low noise amplifier (LNA). The tunable passive circulator, consisting of three Lange couplers, uses self-interference cancellation (SIC) for ...

In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation. This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range.

A fully integrated C-band GaN MMIC Doherty power amplifier with high efficiency and compact size for 5G application. IEEE Access , 7 ( 2019 ), pp. 71665-71674 [[26]]

This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs …

The design and implementation of a broadband quasi-monolithic microwave integrated circuit (q-MMIC) power amplifier (PA) is presented for 0.2 to 2.2 GHz applications.

This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN™ Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology.

The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies. The CHZ9012-QFA is …

This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements.

2015年12月1日 · A broadband monolithic microwave integrated circuit (MMIC) power amplifier design approach is described using lossy matching networks in the form of a bridged-T all-pass network.