The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]

2N3055 是一款 通用 NPN 功率晶体管，是一种 电流控制器件，采用外延基极工艺制造，安装在 密封金属外壳 中，专为通用开关和放大器应用而设计。 当适当额定值的基极信号可以使 2N3055 工作时，2N3055 具有与 BJT 晶体管一样的共同工作特性。 2N3055 功放管 的主要特点是 基极 (b) 端子是晶体管的第一个引脚，没有集电极（c）端子， 2N3055 TAB 覆盖层作为晶体管的集电极。 下图为 2N3055 功放引脚图和实物图。 2N3055 主要有三个端子， 基极、集电极（TAB）、 …

Description: Complementary Silicon Power Transistors. 68 Results. Datasheet: 47Kb/4P. Manufacturer: STMicroelectronics.

PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications.

2024年3月21日 · First introduced in 1960 by the RCA Corporation, the 2N3055 NPN Transistor is one of the oldest transistors that is still used in many projects. 2N3055 transistor comes in TO-3 case and has maximum absolute Collector Current (continuous), Collector to Base voltage, and Power dissipation rating of 15 A, 100 V, and 115 W respectively.

The 2N3055 is an NPN power transistor, that is used in general-purpose applications. It was launched by an American electronics company named “RCA Corporation” at the beginning of 1960 by using the hometaxial power transistor method.

2022年3月11日 · In this text we will discuss the specifications of the 2N3055 bipolar NPN transistor, its pinout, and the replacement equivalents. It is manufactured using epitaxial basic process, in hermetically sealed metal package TO-3. The device is designed to work in switching circuits and power amplifiers.

Part #: 2N3055. Download. File Size: 130Kbytes. Page: 4 Pages. Description: 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS. Manufacturer: Motorola, Inc.

2024年8月19日 · The 2N3055 (P/N 151-0140-00) is a general-purpose silicon NPN power transistor that is widely used in Tek gear. The 2N3055H is an epitaxial device with higher safe operating area than a standard 2N3055 at V CE >40 V.

2N3055/D Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features DC Current Gain − hFE = 20−70 @ IC = 4 Adc Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe ...