2025年1月18日 · LMG365xR070 650V 70mΩ GaN FET With Integrated Driver and Protection 1 Features • 650V 70mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 100V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Designed to ensure the highest efficiency and power density, as well as the best thermal behavior in power conversion applications, the G-HEMT 650V series targets consumer and industrial applications, including solar microinverters, servers, telecom & datacom equipment, adapters/chargers, wireless charging, audio, and vehicle electrification.

Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for low-power 650 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion.

2024年11月22日 · Navitas Semiconductor NV651x/NV652x 650V GaNSafe™ Power ICs are thermally enhanced bottom-cooled SMD versions of the GaNFast™ power IC family. These are optimized for higher power systems using GaNSafe technology.

2024年6月2日 · The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/ PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors.

The TP65H150G4PS 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Nexperia（安世半导体）宣布推出新一代 650V 氮化镓 (GaN) 技术 六月 10, 2020. 奈梅亨 -- 新一代氮化镓技术针对汽车、5G 和数据中心等应用；新器件采用了传统的TO-247封装和创新的铜夹片贴片封装CCPAK

66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for hig. current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leadin. advanceme. ology® cell layout realizes high-current die and high yield. GaNPX® packaging enab.

High-Performance 650-V GaN Transistor with Integrated Gate Driver Description The CGC02102 is a high-performance and highly reliable 650-V enhancement-mode GaN transistor with integrated gate driver, optimized for high-frequency power conversion circuits. The power GaN transistors in CGC02102, have 650-V drain-source blocking voltage and typical