The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization …

难民身份确定（RSD）是评估和决定寻求庇护者是否为难民的程序。 要被归为难民，寻求庇护者必须符合1951年《难民地位公约》或1967年《议定书》规定的资格标准、区域难民文书规定的 …

2021年2月1日 · 凸起的源极/漏极（RSD）结构是薄膜晶体管设计之一，通常用于改善器件特性。 许多研究已经提到，由于可以分散漏极电场的增大的源极/漏极面积，可以降低在漏极侧发生 …

2023年10月1日 · To intelligently generate a suitable remanufacturing scheme that satisfies the minimum carbon emission requirements, this paper proposes an integrated design method for …

2021年2月1日 · In this study, we will discuss how the electric field at the drain side of an RSD device is reduced by a vertical lightly doped drain (LDD) scheme rather than a RSD structure.

In this paper a novel online calibration technique for high-speed DACs is presented. The approach consists of two elements. The first element is the use of a redundant signed digit (RSD) …

2013年3月1日 · In this simulation-based study, the raised-source/drain (RSD) double-gate MOSFET design is optimized for scaling to gate lengths below 10 nm, and its performance is …

2021年2月1日 · The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high …

The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization …

2008年2月8日 · In this paper a novel online calibration technique for high-speed DACs is presented. The approach consists of two elements. The first element is the use of a redundant …