RD01MUS1 Datasheet(PDF) - Mitsubishi Electric Semiconductor
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RD01MUS1-T113 Mitsubishi Transistor (NOS) - RD - RF Parts
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products.
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products.
RD01MUS1 三菱-MITSUBISHI_PDF_数据手册_Datasheet_规格书_ …
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RD01MUS1,RD01MUS1 pdf中文资料,RD01MUS1引脚图,RD01MUS1 …
元器件型号为RD01MUS1的类别属于分立半导体晶体管，它的生产商为Mitsubishi(日本三菱)。厂商的官网为：.....点击查看更多
RD01MUS1-101,RD01MUS1-101 pdf中文资料,RD01MUS1-101引脚图,RD01MUS1 …
designed for VHF/UHF RF amplifiers applications. Band mobile radio sets. RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions.
RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products.
RD01MUS1 数据表 (PDF) - Mitsubishi Electric Semiconductor
部件名: RD01MUS1. 下载. 文件大小: 203Kbytes. 页: 7 Pages. 功能描述: RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W. 制造商: Mitsubishi Electric Semiconductor.
RD01MUS1 pdf, RD01MUS1 下载, RD01MUS1 功能描述, RD01MUS1 数据表, RD01MUS1 …
文件大小: 235.83 Kbytes. 部件名: RD01MUS1. 功能描述: RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W. 制造商: Mitsubishi Electric Semiconductor.
RD01MUS1 Datasheet, fet equivalent, Mitsubishi Electric
RD01MUS1 Description Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. TYPE NAME FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High .