RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz, 1W, 7.2V DESCRIPTION RD01MUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device. FEATURES 1.High Power Gain and High Efficiency Pout>0.8W, Gp>14dB, Drain Effi. =65%typ @ f=520MHz, VDS=7.2V, Idq=100mA, Pin=30mW 2.Integrated gate …
RD01MUS2 Datasheet(PDF) - Mitsubishi Electric Semiconductor
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz • High Efficiency: 65%typ. • Integrated gate protection diode. APPLICATION
Product Lineup | High Frequency Devices | Mitsubishi Electric
This page introduces the product lineup of GaN high-frequency devices and Silicon RF devices.
RD01MUS2 - MITSUBISHI ELECTRIC US, Inc. Semiconductors and …
rd01mus2 Overview Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.
RD01MUS2 Mitsubishi Transistor (NOS) - RF Parts
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RD01MUS2-101,T113 is a RoHS compliant products.
三菱 RD01MUS2 说明书 - 百度文库
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE.
RD01MUS2 锦美-JMnic_PDF_数据手册_Datasheet_规格书_锦美 …
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RD01MUS2B Datasheet (PDF) - Mitsubishi Electric Semiconductor
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. • High power gain and High Efficiency. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. Mitsubishi Electric Sem...
For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets. RD01MUS2B-501, T513 is EU RoHS compliant. This product includes the lead in high melting temperature type …
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RD01MUS2-101,T113 is a RoHS compliant products.