Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks.

RRAM, also known as resistive random access memory or ReRAM, is a form of non-volatile storage that operates by changing the resistance of a specially formulated solid dielectric material.

2020年4月22日 · Owing to their small physical size and low power consumption, RRAM devices are potential for future memory and logic applications. Increased storage density is among the most critical aspects of memory technology to enable the design of …

One noteworthy advancement is Resistive Random Access Memory (RRAM), an emerging memory technology. RRAM can alter its resistance through electrical signals at both ends, retaining its state even after power-down.

2011年9月24日 · With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and ...

2023年3月9日 · Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic...

2020年7月23日 · In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications.

2024年4月11日 · Resistive RAM (ReRAM, also known as RRAM) works by changing the resistance of materials. An electric current is applied to a material, changing the resistance of that material. The resistance state can then be measured. This principle is called ‘memrister’ and relies on the principle of hysteresis.

2023年9月6日 · Resistive random access memory (RRAM) devices are one of the most promising candidates owing to their fast-switching speed and scalability. RRAM is a non-volatile memory device and operates via resistance changes in its insulating layer.