2016年1月15日 · Si/SiC heterojunction was employed to realize non-UV light operation of SiC devices. Si films of preferred orientation have been prepared on 6H-SiC (0001) successfully. HRTEM results indicate that Si film has epitaxial connection with the 6H-SiC substrate. The atomic-structure of Si (110)/SiC (0001) interface is defined by HRTEM.

2024年9月19日 · Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) methods are used to investigate the interface between the layer and the wafer. An interface morphology and orientation relationship between silicon carbide, silicon bonding layer, and hexagonal wafer are under consideration.

TEM, HRTEM and SAED images of SiC-NWs were analyzed and are presented in Fig. 3. The results of un-irradiated SiC-NWs in Fig. 3a (i) show clearly that SiC-NWs have uniform morphology.

: High-resolution transmission electron microscopy (HRTEM) images of the [1-10] zone of cubic SiC layers grown by molecular beam epitaxy (MBE) often reveal regions of...

2013年2月15日 · Si/SiC heterojunction was employed to realize non-UV light operation of SiC devices. Si films of preferred orientation have been prepared on 6H–SiC (0001) C-face successfully. HRTEM results indicate that Si film has epitaxial connection with the 6H–SiC substrate. The lattice-matching mode of the Si/SiC interface is defined by HRTEM.

2023年4月1日 · SiC/SiC composites are attractive candidates for many nuclear systems. As reinforcements, SiC fibers are critical to the in-service performance of composites. In this work, the temperature effects on the irradiation-induced microstructural evolution of Cansas-III SiC fibers were investigated using in-situ transmission electron microscopy (TEM).

Figure 5a shows the HRTEM image obtained from a pure 6H-SiC region using the 11 " 20 Â Ã beam direc- tion. Compared with the simulated atomic model with the same viewing direction (Fig. 5b), it...

2014年1月1日 · 摘要 HRTEM 证实了在 Si (-220)/6H-SiC (0001) 界面具有低晶格失配的周期性结构。 对应于观察到的界面结构，基于密度泛函理论的第一性原理计算被用来理解表面态的键合机制。

2016年11月30日 · These results are systematically investigated by high-resolution transmission electron microscopy (HRTEM), demonstrating that additional pulse irradiations lead to a gradual increase in the...

2018年3月6日 · In this chapter, transmission electron microscopy (TEM) and high resolution X-ray diffraction (HRXRD) were employed to reveal in-plane orientation, interface structure and growth mode of the Si/SiC heterostructure.