We report on a theoretical and experimental investigation of the temperature-dependent optical absorption of nitrogen-doped 4H-SiC for a temperature range between room temperature and …
SiC absorption of near-infrared laser radiation at high …
2016年6月13日 · We report on a theoretical and experimental investigation of the temperature-dependent optical absorption of nitrogen-doped 4H-SiC for a temperature range between room …
Engineering near-infrared single-photon emitters with ... - Nature
2015年7月7日 · Silicon vacancy (VSi)-related defects in SiC have some advantages compared with other solid-state single-photon emitters. In particular, the zero-phonon lines (ZPLs) of VSi …
Silicon/2D-material photodetectors: from near-infrared to mid …
2021年6月9日 · In this paper, we review the recent progresses of silicon/2DM PDs particularly working in the windows from the NIR-band of 1.31/1.55 μm to the MIR-band of 2–6 μm, which …
A study of near-infrared nanosecond laser ablation of silicon …
2013年10月1日 · This work presents a fundamental study about ablation threshold, absorption coefficient and absorption mechanism of silicon carbide (SiC) in the laser drilling process. …
A near infrared MIM metamaterial absorber using SiC
2024年2月1日 · In this study, we introduce a metamaterial absorber operating in the near infrared region. The current metamaterial absorber (MMA) comprising Silver-SiC-Gold demonstrates …
High-performance self-biased Cu/SiC/Si photo-sensor
2024年8月30日 · Silicon Carbide (SiC) shows great potential for use in high temperatures and harsh environments due to its promising physical properties. This report introduces a novel …
OPTICAL CONSTANTS OF SILICON CARBIDE FOR ASTROPHYSICAL …
2009年4月24日 · Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal structures of silicon carbide (SiC) are presented from 1200–35000 …
Ultra-broadband metamaterial absorber in the visible and near …
2021年6月21日 · In this work, an ultra-broadband metamaterial-based perfect absorber is proposed by placing a single layer of subwavelength silicon carbide (SiC) hemisphere array …
Formation of nitrogen-vacancy centers in 4H-SiC and their near …
2019年8月23日 · This paper reports a comprehensive investigation on the NIR-PL properties originating from NV centers in high purity semi-insulating and nitrogen (N) contained 4H-SiC …