1978年，前苏联科学家Tairov和Tsvetkov首次将籽晶引入到SiC晶体生长过程中，这种新生长方法被称为“改进Lely法”(modified Lely method)或物理气相传输法(Physical Vapor Transport method，PVT)[4] ，如下图所示。

一、SiC 单晶生长设备. SiC PVT生长设备 是国产化较高的设备,其难点在于需要解决SiC晶体生长难度大、重复性低、生长良率低、长晶工艺各不相同以及设备高度定制化等挑战，未来设备技术将朝着自动化、高工艺重复性、提升晶体生长良率和厚度以及8时大直径长晶 ...

目前,业界已经开发出多种sic长晶方法,包括:物理气相传输法(pvt)、高温化学气相沉积法(htcvd)、液相法(lpe)、高温溶液法 等,其中pvt法是目前最为广泛采用的sic长晶方式。

2024年11月26日 · In this study, we aimed to develop the PVT process for SiC single crystal growth using CVD-SiC source material by employing crushed CVD-SiC blocks of various sizes. We designed the hot zone structure through simulations and applied size-classified crushed CVD-SiC blocks as the source material.

2014年1月1日 · The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process.

2021年12月18日 · Physical vapor transport (PVT) is the main method for growing a large-size SiC single crystal, which needs to be cost-effective and defect-free. SiC powder is used as the source material during the PVT growth of a SiC single crystal [7].

2025年2月8日 · 一、碳化硅（Sic）外延的基本介绍. 1、基本概念. 在半导体制造领域，“外延” 指的是在单晶衬底上生长一层与衬底具有相同晶体结构的单晶薄膜的过程。碳化硅外延就是以碳化硅（SiC）单晶片为衬底，通过特定的工艺方法，在其表面生长出一层高质量的碳化硅 ...

Physical Vapor Transport (PVT) is a widely used method for the growth of compound semiconductor single crystals such as silicon carbide (SiC) or aluminum nitride (AlN). It is highly favored for its ability to produce high-purity and defect-free crystals.

Silicon carbide (SiC) epitaxial furnaces are a specialized equipment for the production and preparation of SiC epitaxial wafers. This example model demonstrates the process of preparing an SiC epitaxial wafer based on the physical vapor transport (PVT) method in a furnace.

2023年11月26日 · In this study, numerical simulation tools were used to model the thermal field of SiC single crystal growth using the resistance heating PVT method. Through adjusting the relative position of the heater, adjusting the crucible and insulation structure, and setting up dual heaters, the temperature field distribution patterns under different ...