Tensile creep and sustained-peak low-cycle fatigue (SPLCF) tests were conducted in sequence on SiC-fiber-reinforced SiC matrix (SiC/SiC) composites under thermal gradient (TG) conditions in air at temperatures up to 1482 °C.

In this article, the performance and triggering mechanism of the single-event burnout (SEB) of a 4H-SiC trench-gate (TG) MOSFET structure are evaluated by the 2

Pure beta silicon carbide of submicron and micron particle size has been synthesized via carbothermal reduction of nanosilica. The resulted powder and its carbon-silica precursor were characterized...

2019年8月1日 · In this study, 3D structured SiC ceramic architectures were fabricated by stereolithography based additive manufacturing combined with precursor infiltration and pyrolysis (PIP). Firstly, photosensitive SiC slurry was prepared. Then, stereolithography was conducted to fabricate complex-shaped green SiC parts.

The latest studies focusing on the reliability issues of commercial SiC mosfet products, including the PG device, the double-trench device and the asymmetric TG device, are reviewed. For the existing of the gate trenches and the unique structures protecting them, SiC TG mosfet s express quite different instability phenomena from the PG ones ...

Abstract: The applications of wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) in power modules are currently limited by the thermal stability of encapsulation materials, especially when operating temperatures raising to 200 °C or above.

1.一种商品碳化硅中C及SiC含量的测定方法，其特征在于，包括：将待测的所述商品碳化硅以设定的温度曲线在氧气气氛条件下测得TG曲线，所述TG曲线中连续失重段所算得的质量损失作为所述商品碳化硅中游离碳含量； 所述设定的温度曲线包括顺序连接的升温段1 ...

2023年4月10日 · 为了阐明当前的研究现状并更好地理解碳化硅（SiC）功率金属氧化物半导体场效应晶体管（MOSFET）的可靠性，对平面栅极（PG）和沟槽栅极之间的可靠性机制进行了比较本文做了栅极（TG）SiC功率MOSFET，尚未全面总结。 综述了针对商用SiC MOSFET产品可靠性问题的最新研究，包括PG器件、双沟槽器件和不对称TG器件。 由于栅极沟槽的存在以及保护栅极沟槽的独特结构，SiC TG MOSFET 在各种极限和长期电热应力下表现出与 PG MOSFET 截 …

2023年4月26日 · 在本文中，根据 TCAD 仿真，提出并研究了一种新型的集成异质结二极管的 SiC 沟槽栅 MOSFET (HD-TG-MOS)。 n型多晶硅/n型SiC HD通过多晶硅和半导体之间的直接接触被引入到凹槽中。 因此，与传统的 SiC 沟槽栅极 MOSFET (C-TG-MOS) 相比，第一和第三象限的器件性能得到显着改善。 更好的是，在异质结极低的势垒高度的帮助下，当用于反向续流时，与体二极管的 ~2.7 V 相比 ，拐点电压降低至仅 0.5 V。 这些提升使得SiC HD-TG-MOS在高频功率转 …

Download scientific diagram | Schematic representation of oxidation of SiC in the TGA from publication: Diffusional effects for the oxidation of SiC powders in thermogravimetric analysis ...