The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

本款消费级N沟道MOSFET采用紧凑型TO-252-2L封装，拥有出色的650V高耐压性能及7A电流处理能力。 专为要求严苛的消费电子开关应用设计，有效提升系统能效与稳定性，是高压环境下优化电路的理想半导体器件。 7N65由HXY MOSFET (华轩阳电子)设计生产，立创商城现货销售。 7N65价格参考￥0.8272。

立创商城提供juxing(钜兴)的场效应管(mosfet)7n65中文资料,pdf数据手册,引脚图,封装规格,价格行情和库存，采购7n65上立创商城

下载SVF7N65CMJ中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Notes: 1.

lanar stripe and DMOS technology. This technology allows a minimum on-state resistance a. d superior switching performance. It also can withstand high energy pulse in t. e avalanche and …

UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

7N65(B)(D)(F) 7A N-Channel Power MOSFET Rev.2021 Page 1 Features Case: Molded plastic body Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 Polarity: As marked Mounting Position: Any Mechanical Data Single phase half-wave 60Hz,resistive or inductive load, Ratings at 25 C ambient temperature unless otherwise specified.