2016年7月15日 · Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin.

2020年4月10日 · We report Raman study of SnTe and SnSe as a function of pressure at room temperature along with first-principles density functional theory calculations. Under pressure, isostructural transition is observed in SnTe, as revealed by the anomalous softening of the strongest Raman mode up to 1.5 GPa, accompanied by an increase in the linewidth.

In this research a colloidal alternative route to synthesize SnTe, and the influence of ammonium hydroxide into the Sn and Te phase formation at atmospheric conditions is reported. The obtained...

2020年1月13日 · The Raman spectrum of SnTe single crystal showed sharp peak at 132 cm−1, attributed to transverse optical phonon vibration mode. The variation of d.c. electrical resistivity with temperature showed the SnTe single crystal to be metallic in nature and the value of bandgap is 0.19 eV.

Amongst the vast compound semiconductors, tin telluride (SnTe) is a potential candidate to find interest in the 2D form. The single crystals in the 2D flake forms of SnTe are grown by vap......

2024年2月1日 · Thin film on a glass slide substrate of tin telluride (SnTe) is deposited at room temperature by drop casting method. The thin films are thoroughly characterized. The study by diffraction of X-ray and Raman stated the crystalline structure and SnTe phase of the films. The films have a cubic structure with space group of Fm -3m.

1974年2月15日 · The ferroelectric phase transition in SnTe from a cubic to a rhombohedral structure at liquid-helium temperatures is investigated by Raman-scattering techniques. Using a backscattering geometry, Raman peaks are observed which correspond to longitudinal-optical (LO) phonons in bulk SnTe single crystals at 4°K, as well as in SnTe single crystal ...

2023年10月6日 · Tin telluride (SnTe), as a narrow bandgap semiconductor material, has great potential for developing photodetectors with wide spectra and ultra-fast response. At the same time, it is also an important topological crystal insulator material, with different topological surface states on several common …

1977年7月1日 · The soft TO-phonon in SnTe (p = 1.1 × 10 20 cm −3) has been observed by Raman scattering below the phase transition temperature (T c = 105 K). The temperature dependence of the phonon frequency is given by ω TO 2 = γ ( T c − T ) cm −2 .

We report Raman study of SnTe and SnSe as a function of pressure at room temperature along with first-principles density functional theory calculations. Under pressure, isostructural transition is observed in SnTe, as revealed by the anomalous softening of the strongest Raman mode up to 1.5 GPa, accompanied by an increase in the linewidth.