Design and measured performance of a mmWave reflective SPDT switch MMIC with vertical RF PIN diodes on GaAs are presented. The switch design uses a modified double shunt topology with distributed switching elements to extend the bandwidth beyond the limitations of …

The SPDT MMIC switches were developed with coplanar waveguide (CPW) GaN-HEMT technology to operate in X-Band. The measured performance showed that the switches have typical insertion loss of better than 2 dB, higher than 30 …

Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz.

Abstract: A high-power, broadband monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch is designed with gate-optimized high-electron-mobility transistors (HEMTs) using AlGaN/Gallium nitride (GaN) technology.

The MASW-011036 is a high power SPDT with 50 O terminated RF ports. This broadband, high linearity, SPDT switch was developed for Ka–Band applications that require up to 13 W of power handling while maintaining low insertion loss and high isolation. The SPDT MMIC utilizes MACOM’s proven AlGaAs PIN diode technology.

The HMC986A is a reflective, single-pole, double throw (SPDT) switch, manufactured using a gallium arsenide (GaAs) process. This switch typically provides low insertion loss of 2.3 dB and high isolation of 30 dB in broadband frequency range from 0.1 GHz to 50 GHz. This switch operates with two negative logic control voltages from −5 V to −3 V.

2019年8月5日 · 可用的微波开关配置包括一个简单的单刀双掷（SPDT）开关、多位置开关、级联和树开关、矩阵开关。 SPDT开关有一个输入端口，可以连接到两个输出端口中的一个。 多位置开关将一个输入端口连接到多个输出端口之一。 pickering的SPDT射频开关最多可有17个通道，频率最高可达8GHz，阻抗为50 ohm和75 ohm。 级联开关使用多个继电器将一个输入连接到多个输出之一。 路径长度（因此，相位延迟）会有所不同，这取决于信号必须经过的继电器数量。 级 …

Mini-Circuits’ MSWA2-50+ is an absorptive GaAs MESFET SPDT MMIC Switch supporting a wide range of switching applications from DC to 5000 MHz. This model provides high isolation and ultra-fast switching 5ns Rise/Fall time. It is produced using GaAs MESFET process and comes in a tiny 3x3mm QFN package rated MSL1. Feature Advantages

RF SPDT Switch MMIC NSG1001MX, NSVG1001MX This device is single pole dual throw (SPDT) type RF antenna switch MMIC. It has low insertion loss and high isolation. This is designed for wireless communication applications such as WLAN and V2X. It adopts a small surface mount package and it is also suitable for

2024年11月26日 · This paper presents the design and analysis of dual-band monolithic microwave integrated circuit (MMIC) switches, including a single pole double throw (SPDT) an