The IGBT/Diode block is a simplified mode of an IGBT (or GTO or MOSFET)/Diode pair where the forward voltages of the forced-commutated device and diode are ignored. The IGBT/Diode …

The IGBT block implements a semiconductor device controllable by the gate signal. The IGBT is simulated as a series combination of a resistor Ron, inductor Lon, and a DC voltage source Vf …

IGBT devices are the most used semiconductor switches for high-power inverters thanks to their unique ability of better switching frequency, simpler gate driver, and available power rating. …

The IGBT (Ideal, Switching) block models an ideal insulated-gate bipolar transistor (IGBT) for switching applications. The switching characteristic of an IGBT is such that if the gate-emitter …

See the N-Channel IGBT block reference page for further information. The plot below shows the collector current vs collector-emitter voltage characteristics for a range of gate-emitter …

2024年11月26日 · Instead of modifying the block from SPS library to model switching losses, I would recommend using the "IGBT (Ideal, Switching)" block from Simscape Electrical library …

2023年12月15日 · 简单介绍一下单移相调制也就是常说的SPS控制，即原副边驱动存在一个移相角D2，而同一侧的相对桥臂的开关管为互补开通，占空比恒定为50%。 据此在 MATLAB 中搭建 …

2021年2月9日 · IGBT由P-MOSFET和GTR混合组成的电压控制型自关断器件。 它将P-MOSFET和GTR的优点集于一身，既具有P-MOSFET输入阻抗高、开关速度快、工作频率高、热稳定性 …

This example shows the generation of a temperature profile based on switching and conduction losses in an insulated-gate bipolar transistor (IGBT). There are two buck converters. For one …

This example shows generation of the Ic versus Vce curve for an insulated gate bipolar transistor. Define the vector of gate-emitter voltages and minimum and maximum collector-emitter …