2016年7月22日 · Here, we report that under special imaging conditions, STM measurements can fully resolve the native atomic scale defect structure of MoS2 single layers. Our STM investigations clearly...

2020年5月19日 · The interaction between molybdenum disulfide monolayers and gold is studied by combining scanning tunneling microscopy (STM) measurements on extended MoS2 films grown by pulsed laser deposition and...

2020年11月9日 · With a combination of scanning tunnelling microscopy/scanning tunnelling spectroscopy (STM/STS) and local transport studies, we observe that the sulfur vacancy, which is the predominant defect in...

2022年2月28日 · Here, we present a low-temperature scanning–tunneling microscopy and spectroscopy investigation of a common point-defect in monolayer molybdenum disulfide (MoS 2). We employ a sample preparation...

Here, we present a detailed STM and scanning tunneling spectroscopy (STS) investigation of the electronic properties of MoS 2 on Au (111) as a function of the twist angle. High-quality heterostructures allow us to explore genuine twist-angle-dependent properties.

1996年11月20日 · From the elastic scattering quantum chemistry technique, it is shown that the images of the MoS 2 surface obtained with an STM depend on the distance between the tip apex and the surface. At large distances, the tip apex and the Mo d-bands are coupled only through the sulphur surface layer. This leads to image the sulphur sites only.

2016年8月1日 · In the present paper we investigate CVD-grown MoS 2 flakes on HOPG with STM, Scanning Tunneling Spectroscopy (STS) and Current Imaging Tunneling Spectroscopy (CITS). We have studied the electronic properties of the MoS 2 /graphite system with high resolution including the properties of edges and grain boundaries.

1992年1月1日 · Scanning tunneling microscopy is used to modify the surface structure of molybdenum disulfide (MoS 2). A natural MoS 2 crystal often has stable point defects. This study shows that surface sulfur atoms are excised by field evaporation and these artificial defects can be used to form characters at room temperature.

Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of...

Natural MoS 2 crystals were cleaved prior to the STM experiment. The measurements have been carried out under ambient conditions. Typical tunneling parameters were 1.6nA tunneling current and 0.35V gap voltage. Some nanometre sized inclusions were found within the atomically resolved crystal lattice.