Atomic‐scale strain analysis for advanced Si/SiGe heterostructure …
An overview of the characterization of strain in Si/SiGe heterojunction for 3D stacked transistors by TEM with diffraction and imaging methods is presented in this paper, with evaluation in …
In situ TEM study of deformation-induced crystalline-to-amorphous ...
2016年7月22日 · In situ TEM compression experiment demonstrated a direct amorphization process from the single crystalline diamond cubic Si phase, owing to the accumulation of …
Mapping of the mechanical response in Si/SiGe nanosheet device ...
2022年6月10日 · Although transmission electron microscope (TEM) techniques are typically used because they possess a lateral spatial resolution that can reach below the...
In Situ and Ex Situ TEM Study of Lithiation Behaviours of Porous ...
2016年8月30日 · In this work, we study the lithiation behaviours of both porous silicon (Si) nanoparticles and porous Si nanowires by in situ and ex situ transmission electron microscopy …
High-resolution TEM/STEM analysis of SiO2/Si (100) and La2O3/Si …
2006年1月30日 · Abstract: We have performed direct observations and elemental analyses of SiO 2 /Si (100) and La 2 O 3 /Si (100) by spherical aberration-corrected transmission electron …
(a) TEM image of Si [110] single crystal with corresponding FFT ...
In this report we demonstrate the successful 80kV alignment of a double aberration corrected TEM/STEM (JEM-Z3100F-R005) equipped with a cold field emission gun designed to operate …
TEM and SEM study of nano SiO2 particles exposed to influence of ...
2016年7月1日 · Before and after neutron irradiation, in order to identify the “adhesion” in silica nanoparticles, analyses have been conducted on transmission electron microscope (TEM) at …
In Situ TEM of Two-Phase Lithiation of Amorphous Silicon …
2013年1月16日 · Here, in situ transmission electron microscopy is used to observe the lithiation/delithiation of amorphous Si nanospheres; amorphous Si is an important anode …
Electron Microscopy (EM) Analysis of Silicon
Voyles et al [1] analyzed Sb (antimony) doped Si (silicon) in the <110> zone-axis orientation using ADF-STEM (annular dark-field scanning transmission electron microscopy) operated at 200 …
Quantitative TEM of point defects in Si - IEEE Xplore
We review the use of transmission electron microscopy (TEM) to provide a quantitative measurement of both vacancy and interstitial clusters in ionimplanted sili
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