2018年1月1日 · Post-growth TEM characterization allowed identifying constitutive dislocations of some subgrain boundaries for the case of [001] seeds. In-situ TEM straining of Si at high temperature also allowed measuring dislocation mobility at several temperatures. Those are compared to the dislocation velocities in pure Czochralski Si found in literature.

2025年1月1日 · Bulk silicon (Si) exhibits brittle behavior at room temperature due to high lattice friction stress for dislocation motion associated with strong covalent bonds. However, notable plasticity has been observed in bulk Si at temperatures above the brittle-to-ductile transition temperature of about 800 K [1].

2016年12月1日 · In this work, we report the reproducible formation of multiple twinned domains inside solar grade Si single crystals grown by directional solidification above a (111) seed.

2016年7月22日 · We demonstrate that diamond cubic Si transforms into amorphous silicon through slip-mediated generation and storage of stacking faults (SFs), without involving any intermediate crystalline phases.

孪晶 是指两个晶体 (或一个晶体的两部分)沿一个公共晶面 (即特定取向关系)构成镜面对称的位向关系，这两个晶体就称为"孪晶"，此公共晶面就称孪晶面。 六方结构 的孪晶按照孪生后晶体在原C轴方向上产生的应变性质可分为 拉伸孪晶 和 压缩孪晶。 ① FCC、BCC： FCC： {111}<112> BCC： {112}<111> ② HCP. 室温下 HCP金属常见的孪晶： {10-12}拉伸孪晶. {11-22}压缩孪晶. 其他孪生类型如 {11-21}和 {11-23}拉伸孪晶， {10-11}和 {11-24}压缩孪晶往往需要更高的临界剪 …

Transmission electron microscope (TEM) investigations demonstrated that in these strained regions a high density (up to 103–104 cm–1) of twin lamellae occurred, which, however, cannot explain the formation of local stresses in general. Besides, the non-uniform stress cannot be caused by dislocations.

Voyles et al [1] analyzed Sb (antimony) doped Si (silicon) in the <110> zone-axis orientation using ADF-STEM (annular dark-field scanning transmission electron microscopy) operated at 200 kV, directly observed individual Sb atoms at atomic-resolution, and identified the Sb clusters in Si responsible for the saturation of charge carriers.

Fig. 9 shows the typical TEM bright-field images of the stacking faults and the twinned eutectic Si particles as well as their selected area diffraction patterns for the Al-6Si alloy with 0.06%...

Si (or large twinned) grains and large subgrains domains originating from inappropriate seed junctions may for instance appear and multiply essentially on the edges of the ingots and degrade locally the PV efficiency of Si (see

2005年8月12日 · Carbon supersaturation and high density of twin lamellae influence the physical properties of multi‐crystalline silicon and restrict its applicability as a material in photovoltaics.