2018年4月10日 · In order to avoid these issues, yttria-stabilized zirconia (YSZ) can be used as a buffer layer to incorporate epitaxial oxides on Si. During growth in reducing conditions, the deposited...

2023年3月15日 · High-quality (100)-oriented yttria-stabilized zirconia (YSZ) films with uniform thickness were epitaxially grown on silicon substrates by a two-step process of pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RFS).

2022年11月24日 · Owing to the small lattice mismatch with Si (Fm3̅m, cubic, 5.431 Å), YSZ can be grown epitaxially on Si. The epitaxial YSZ layers on Si can function as a buffer layer to integrate additional functional oxide overlayers onto Si.

2024年7月8日 · 该成果以“ Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates ”为题目，在Journal of Semiconductors上以短通讯形式发表。团队长期得到王占国院士的大力支持和悉心指导。

Yttria-stabilized zirconia (YSZ) films were used as insulator layers in silicon-on-insulator structures. YSZ films on Si substrates were grown epitaxially by “off-axis” rf magnetron sputtering of a single-crystal YSZ target. Then Si films were grown on YSZ by molecular beam epitaxy.

2022年6月29日 · 氧化钇稳定氧化锆 (YSZ) 是一种出色的缓冲层，可通过脉冲激光沉积 (PLD) 和溅射等低成本沉积技术在硅上外延生长，以实现新型电子器件，其中各种外延功能氧化物集成在 Si 上。 然而，Si上生长的YSZ的结晶质量比通过分子束外延（MBE）生长的SrTiO 3缓冲层的结晶质量差。 在这里，我们报告了一种简单的退火技术，用于在 Si 衬底上实现高质量的单晶氧化物。 我们通过 YSZ 的热膨胀系数（~9 × 10 -6 K -1) 和Si (∼3 × 10 -6 K -1 )，它作为缺陷湮灭的额外能 …

2006年4月1日 · Diamond/iridium/yttria-stabilized-zirconia (YSZ)/silicon is a promising multilayer structure for the future realization of single crystal diamond wafers. In the present work we studied the heteroepitaxial growth of YSZ films on Si (001) prepared by pulsed laser deposition.

2012年8月8日 · In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray ...

2018年6月11日 · In the present work, heteroepitaxy of diamond on Ir/YSZ/Si (111) with different off-axis angles and directions has been studied. During the growth of the first microns, strong and complex intrinsic stress states were rapidly formed. They restricted the range of suitable temperatures in this study to values between 830 °C and 970 °C.

2022年12月12日 · Using high-resolution X-ray diffraction (HRXRD), we analyzed domain structures and strain states of monoclinic β-Ga 2 O 3 thin films on cubic YSZ-buffered Si substrates and demonstrated the improved crystalline quality through a post-annealing process.