2023年1月1日 · High-thermal-conductivity composites with silicon nitride (Si3 N 4) as the matrix and diamond particles as the reinforcing phase were successfully developed. Si 3 N …

本实验使用避射电镜(TEM)对Si_3N_4陶瓷材料的显微结构(晶粒,晶界,位错)及烧结机理进行了研究.利用明场像,暗场像及晶界相产生的漫散晕轮证明晶界相是以玻璃态形式存在,从而说明是液相 …

As the strain increased from 67% to 167%, the mean grain diameter of Si3N4 with MgSiN2 as an additive increased by 49%, reaching 1.36 ± .6 µm. The addition of MgSiN2–Y2O3 resulted in a...

2012年11月1日 · 摘要 用 120–720 keV C60+,2+ 离子照射非晶 Si3N4（厚度 20 nm）薄膜，并使用透射电子显微镜（TEM）观察。 通过 TEM 直接观察到在无定形材料中产生的离子轨迹。

2015年10月1日 · In the present study, to fabricate thinner Si 3 N 4 membranes with a thickness of less than 5 nm in a wafer, a new fabrication process that employs a polycrystalline-Si (poly-Si) …

Si 3 N 4 ceramic was joined to itself using a filler alloy of (CuZn)85Ti15 at 1123–1323 K for 15 min. TEM observation showed that a reaction zone of TiN and/or Ti 2 N exists at the interface …

2023年12月15日 · Based on these advantages, Si3 N 4 features broad application prospects in manufacturing high-temperature gas/liquid filters, wave-transmitting materials (e.g. missile …

Cross-sectional TEM images show that an RF power of 350 W induced some damage to the Si (111) surface. The thickness of nitrided Si3N4 was measured to be about 5–7 nm. XPS results …

The nanoneedles show a α‐Si3N4@SiOx core‐shell heterostructure as characterized by TEM, with single crystalline α‐Si3N4 core and an insulating amorphous silicon oxide shell.

摘要 在 400 至 1200°C 的温度范围内，研究了 Cr、Co 和 Ni 金属薄膜与 LPCVD Si3N4 薄膜之间的固态界面反应。 通过TEM、SEM、X射线衍射和俄歇电子能谱分析了反应产物的组成、结 …