Advances in silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) technologies resulted in an impressive increase in high-frequency performance during the last decade extending the addressed application frequencies into the mm- and sub-mm-wave bands.

2002年8月6日 · The combination of SiGe HBT's with advanced Si CMOS to form an SiGe BiCMOS technology represents a unique opportunity for Si-based RF system-on-a-chip solutions. This paper reviews state-of-the-art SiGe HBT technology and assesses its potential for current and future RF and microwave systems.

2024年1月18日 · 欧盟大力发展SiGe HBT技术和应用的主要目的是进一步巩固和加强欧洲的领先优势。 本文主要介绍SiGe HBT工艺的特别之处以及基于SiGe HBT工艺的现有和潜在应用。

SOI SiGe HBT作为 BiCMOS工艺的核心器件, 其频率特性决定了电路所能达到的工作速度. 为此, 本文针对所提出的SOI SiGe HBT 器件结构, 重点研究了该器件的频率特性, 并通过所建立的集电区电容模型予以分析. 规律和结果为: 1) SOI SiGe HBT特征频率随集电区掺杂浓度的升高而增加; 2) SOI SiGe HBT特征频率与集电极电流IC之 间的变化规律与传统SiGe HBT的相一致; 3) 正常工作状态, SOI SiGe HBT(集电区3 1017cm3掺杂)最 高振荡频率fmax大于140 GHz, 且特征频率fT大于60 …

The heart of SiGe technology is a SiGe heterojunction bipolar transistor (HBT), which offers advantages over both conventional silicon bipolar and silicon CMOS for implementation of communications circuits.

2016年4月7日 · 最具有代表性的台面型器件是Daimler—Benz研究中心制备的台面型SiGe. HBT，A．schuppen等人于1994年在IEEE国际电子器件会议（IEDM）上报道的双. 台面自对准结构的SiGeHBT。

The program began with an idea to replace a conventional implantation step, used in every silicon semiconductor bipolar process, by growing an in-situ doped alloy (SiGe), around 1987. A small group of people successfully persuaded a large digital computer manufacturer to invest in and eventually succeed in what was a new unproven technology for ...

2016年1月11日 · A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeling.

2018年10月10日 · Today, SiGe heterojunction bipolar transistors (HBT) in BiCMOS technology environment are widely used for applications like automotive radar, high-speed wireless and optical data links, and high-precision analog circuits.

Improvements in high-speed performance, impurity-profile engineering, and technology trends in SiGe HBTs and BiCMOS devices are briefly reviewed. Advances in self-aligned SiGe HBT structures associated with a thin base have significantly raised cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ to more than 200 GHz.