2001年7月1日 · The reliability of AFM grown SiO 2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow.

我是在文献中看到的，作者为了测二维材料高度，将材料先转移带SiO2上，然后不知道用什么工具在材料表面划出了一道规则的缺口，可以看到SiO2表面，最后使用AFM测二维材料高度。请问各位师兄师姐，他们是怎样做到的？另外我还想问一下，将二维材料转移到TEMgrid的时候有什么技巧？

In this paper, we study the optical properties, the surface roughness and the topography of Si and SiO2 substrates-coated with PMMA film layer using UV-Vis-NIR Spectrometer and atomic force ...

In this paper, we investigated the effects of oxygen plasma and humidity on some key surface properties such as water contact angle, roughness and hardness of three materials – silicon (Si ...

2001年5月25日 · 为了确定原子力显微镜 (afm) 生长的 sio2 是否适合用作纳米电子学中的栅极氧化物，需要对这些薄膜进行表征。在本文中，介绍了大面积 sio2 图案的 afm 制造和地形表征的结果。

1999年8月1日 · The objectives of this research were to compare the effects of these surface treatments on glass and quartz using AFM, surface roughness and contact angle measurements, and a novel SAW sensor technique which measures water adsorption at temperatures slightly above the dewpoint.

2001年6月1日 · In order to establish whether atomic force microscope (AFM) grown SiO 2 is appropriate for use as a gate oxide in nanoelectronics, a characterization of these films needs to be performed. In this paper results on AFM fabrication and topographical characterization of large-area SiO 2 patterns are presented.

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory ...

1998年11月23日 · In this work, we demonstrate the applicability of conducting atomic force microscopy (AFM) for the quantitative electrical characterization of thin (3–40 nm) SiO 2 films on a nanometer scale length.

Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO 2 thin films, with different O 2 plasma powers, is relatively smooth and the films all present favorable insulation properties.