2009年9月1日 · Photoluminescence (PL) properties of Si nanoparticles (Si-np) produced by irradiating the Si wafer with nanosecond laser pulses at 532, 683 and 1064 nm are studied. Si-np are found to be deposited in a doughnut shape around the irradiated spot. The irradiation wavelength is found to be the main cause for the particle size variation.

2019年1月1日 · Photoluminescence allows tracking thickness dependent changes of SiO 2 layers. We present a comparative analysis of Cathodoluminescence (CL), Photoluminescence (PL) and Electroluminescence (EL) spectra measured on Si-SiO2 structures with various thicknesses of …

2003年5月16日 · In this publication we present our experimental findings, which indicate that the intensity of the 720–800 nm PL band is influenced by the deposition temperature of the initial Si layer and by...

SiO 2 @Ag nanocomposite (NC) has been synthesized by the chemical reduction and Stӧber method for enhancement photoluminescence (PL) and Raman characteristics of Rhodamine 6G (R6G) and Malachite...

2019年1月1日 · Si-SiO2 结构的 PL 提供了关于 SiO2 层中光学活性中心的附加信息。 PL 光谱允许跟踪 SiO2 层的变化，同时比 EL 和 CL 更详细地增加其厚度。 我们认为电子（CL 和 EL）和光子（PL）的发光激发机制存在显着差异。

2. 在室温下, 我们观测了高剂量Si+ 注入热氧化SiO 2 薄膜样品的可见光发射, 其PL 谱 如图1 所示. 可以看到2197eV (41619nm ), 2132eV (53416nm )和1173eV (71617nm )三个PL 峰, 以下分别简称3, 2 和1 号峰. 这三个PL 峰是相互分离的, 它们的半高宽(FW HM ) 分别

Photoluminescence measurements depicts that nano-textured SiO 2 films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored.

1998年7月18日 · The Si/SiO 2 co-sputtered film had a stronger photoluminescence (PL) intensity at about 1.7 eV than the other two co-sputtered films from Ar ion laser excitation at 514.5 nm. The weak PL observed for Si/Al 2 O 3 and Si/MgO is deduced to be due to the low content of SiO x where electrons and holes recombine and PL is emitted.

观测到 2197eV 、 132eV 和 1173eV 的三个光致发光 ( PL ) 峰, 经快速热退火 (R TA ) 处理后, 其 2 峰是由氧空位缺陷引起的. 对于 2180eV 的 PL 峰的产生, 一种可能的解释是由 3 号峰红移 ・ 位悬挂键 (O - Si- O ) 的形式也将发生某种变化. 其对应的缺陷能级发生移动. 因而, 退火 ...

2003年5月19日 · Room temperature photoluminescence (PL) measurements showed that for those samples in which the thickness of the remaining Si layer was greater than ∼ 6 nm, the spectra exhibited a peak at ∼ 650 nm.