2023年12月20日 · SiGe是一种半导体合金材料，由硅(Si)和(Ge)元素构成，其具有优异的电学、光学和热学性能。 同时，SiGe材料的禁带宽度随着含锗量的增加而缩小，因此具有比单晶硅更 …

然后说一下SiGe工艺的概念：SiGe工艺（应变硅），是在制造电路结构中的双极晶体管时，在硅基区材料中加入一定含量的Ge形成应变硅异质结构晶体管，以改善双极晶体管特性的一种硅基 …

2023年6月9日 · In this work, we fabricated vertically stacked SiGe nanosheet (NS) FET devices on cost-effective traditional Si substrates by selective etching of Si in SiGe/Si/SiGe stack …

2022年9月2日 · Abstract: A novel SiGe/Si phototransistor with high figure of merit (FOM) of gain*early voltage for optical communication was designed and fabricated in a standard 0.35 …

In this work, we report high performance (I on ~1 mA/μm at Ioff 100nA/μm @ 1V Vcc) short channel p-type SiGe/Si FinFETs combining high mobility, low T inv (scaled High-k w/o Si cap), …

SiGe (/ ˈsɪɡiː / or / ˈsaɪdʒiː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a …

Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce …

2023年4月8日 · Compressive strained SiGe is a promising alternative to Si in pFETs due to its superior hole mobility, which can enhance device drive current and transconductance (G m) …

2023年11月21日 · SiGe/Si multilayer is the core structure of the active area of gate-all-around field-effect transistors and semiconductor quantum computing devices. In this paper, high …

针对SiGe p型金属氧化物半导体场效应管(PMOSFET)结构, 通过求解纵向一维泊松方程,得到了器件的纵向电势分布, 并在此基础上建立了器件的阈值电压模型,讨论了Ge组分、缓冲层厚度、 Si …