半导体工艺简介 - 知乎 - 知乎专栏
2023年9月8日 · SOI中文名： 绝缘衬底硅（Silicon On Insulator）又称SOI-CMOS。 SOI工艺最大的特点是在衬底Si和顶层Si之间加入了一层SiO2绝缘层。 这种独特的Si/SiO2/Si结构实现了器 …
SiGe BiCMOS工艺在半导体领域的地位究竟如何？ - 知乎专栏
2023年12月20日 · 以电子器件为例，SiGe可用于高速CMOS (互补金属氧化物半导体)技术中，以提高发射极寄生电容和场效应管的开关速度。 在通讯领域，SiGe有着广泛的应用，比如在高 …
High-Performance P- and N-Type SiGe/Si Strained Super-Lattice
2023年4月8日 · This research presents the optimization and proposal of P- and N-type 3-stacked Si 0.8 Ge 0.2 /Si strained super-lattice FinFETs (SL FinFET) using Low-Pressure Chemical …
Abstract—Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. …
SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave ...
This article details the major Si processes, namely Complementary Metal Oxide Semiconductor (CMOS) and SiGe Bipolar CMOS (BiCMOS), and their foray into the wireless transceiver …
A comparison of Si CMOS, SiGe BiCMOS, and InP HBT …
The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of …
Toward High Performance SiGe Channel CMOS: Design of High …
Abstract: For the first time, high electron mobility in tensile-strained SiGe channel nFinFETs outperforming Si is reported to explore the feasibility of high performance SiGe CMOS. To …
Abstract — This paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of …
SiGe/Si material for PMOS application - Purdue University
The scaling of CMOS devices has led an exploration of new materials to replace silicon (Si). SiGe has shown promise as a new channel material for PMOS type of devices. Ge offers highest …
科普 | SiGe BiCMOS工艺在半导体领域的地位究竟如何？-电子头条 …
2023年12月16日 · SiGe BiCMOS工艺集成技术，是在制造电路结构中的双极晶体管时，在硅基区材料中加入一定含量的锗，形成应变硅异质结构晶体管，以改善双极晶体管特性的一种硅基工 …