Silicon-Germanium (SiGe) composition and thickness …
The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) …
Experimental study of the ultrathin oxides on SiGe alloy formed …
2020年3月1日 · In this study, the compositions of ultrathin oxides (<1.2 nm) formed by oxidizing SiGe surface are characterized using X-ray photoelectron spectroscopy (XPS) technology as a …
Benefits of XPS nanocharacterization for process development and ...
2017年11月1日 · In this paper, X Ray Photoelectron Spectroscopy (XPS) has been used to characterize the SiGe channel layer. XPS is a well-established method for the analysis of …
XPS of SiGe samples across the entire layer thickness
We report the results of investigation of the thermopower (Seebeck effect) of a ThCr2Si2-structured heavy fermion single-crystalline YbPd2Si2 compound (itterbium-palladium-silicon, 1 …
Hybridization of ellipsometry and XPS energy loss: Robust band …
2024年1月1日 · In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO 2 and MoO x, using the …
Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and …
2023年2月23日 · We investigated 1-D and 2-D chemical depth mapping using SIMS, XPS and TEM-EDX. For strain/lattice spacing engineering effects, we used XRD and Raman analysis …
Si/SiGe多层堆叠的干法蚀刻 - CSDN博客
2023年12月28日 · 研究发现Ge含量增加导致SiGe的蚀刻速率上升，通过XPS分析揭示了Ge富集现象的原因，包括SiGe合金中Ge的挥发性和表面氧化的影响。 引言. 近年来，硅/硅锗异质结构 …
Silicon-Germanium (SiGe) composition and thickness
2014年5月1日 · The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray …
Silicon-Germanium (SiGe) Composition and Thickness
The DOE consists of 17 wafers with 6 different SiGe thickness splits over a wide range, and 4 composition splits with less than 5%AC apart. The objective was to investigate the sensitivity …
椭圆偏振和 XPS 能量损失的混合：SiGe、HfON 和 MoOx 薄膜的 …
在本研究中，我们结合两种技术：光谱椭圆光度法和能量损失信号 (ELS)，比较了三种不同材料：SiGe、N 掺杂 HfO 2和 MoO x的光学常数和光学带隙测定的鲁棒性。