2005年12月5日 · The strain, composition and thermal stability of the channel and VS in Ge/Si 1−x Ge x structures for p-HMOS devices was studied by XRD reciprocal space maps and RBS. …

2001年2月6日 · SiGe is the first heteroepitaxial process to be incorporated in a high-volume Si Fab environment and, as such it introduces new characterization challenges. Heteroepitaxial …

2019年9月21日 · The composition of SiGe thin films can be determined from the split angle between the SiGe and Si substrate peak in the XRD spectra. Because of the internal reflection …

2023年4月28日 · A weak XRD signal is seen in between the two SiGe peaks in Fig. 2a. A corresponding signal is also seen in an RSM around 333 diffraction (reported in Ref 8 ). These …

2006年6月5日 · For this purpose, we performed X-ray diffraction (XRD) measurements. The results of these measurements indicate that the in-plane strain parameters of SiGe layer are …

This article reports the characterization of thin SiGe/Si(100) epilayers using reciprocal space maps measured by a laboratory X-ray instrument and a high-resolution X-ray diffraction study …

An epitaxial SixGey layer on a silicon substrate was quantitatively evaluated using rocking curve (RC) and reciprocal space map (RSM) obtained by powder X-ray diffraction (XRD), energy …

2023年2月23日 · We investigated 1-D and 2-D chemical depth mapping using SIMS, XPS and TEM-EDX. For strain/lattice spacing engineering effects, we used XRD and Raman analysis …

High resolution XRD (HR-XRD) is a well known method for measuring the composition and thickness of compound semiconductors such as SiGe, AlGaAs, InGaAs, and other materials. …

powerful tool for studying interdiffusion in Si/SiGe heterostructures and in this paper we investigate several key issues related to its use and interpretation. Interdiffusion at Si/SiGe …