- SiC crystallizes in a variety of polytypes, each with unique electrical, optical, thermal, and mechanical properties.onlinelibrary.wiley.com/doi/10.1002/9781118313534.ch2
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Silicon carbide (SiC), also known as carborundum (/ˌkɑːrbəˈrʌndəm/), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. … 展开
Naturally occurring moissanite is found in only minute quantities in certain types of meteorite, corundum deposits, and kimberlite. … 展开
Because natural moissanite is extremely scarce, most silicon carbide is synthetic. Silicon carbide is used as an abrasive, as well as a semiconductor and diamond simulant of … 展开
Abrasive and cutting tools
In manufacturing, it is used for its hardness in abrasive machining processes such as grinding, honing, water-jet cutting and 展开• Kelly, J.F. "A Brief History of Silicon Carbide". University of London.
• "Moissanite". Mindat.org.
• "Silicon carbide". NIOSH Pocket Guide to Chemical Hazards. 展开Silicon carbide exists in about 250 crystalline forms. Through inert atmospheric pyrolysis of preceramic polymers, … 展开
CC-BY-SA 许可证中的维基百科文本 Crystal growth principles, methods, properties of silicon carbide …
2025年1月1日 · This paper reviews the research progress of SiC, including the crystal structure of SiC, the growth method of SiC crystals, the unique properties, and the preparation of SiC …
Ultrahigh-quality silicon carbide single crystals | Nature
2004年8月26日 · Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices1,2.
- 作者: Daisuke Nakamura, Itaru Gunjishima, Satoshi Yamaguchi, Tadashi Ito, Atsuto Okamoto, Hiroyuki Kondo, ...
- Publish Year: 2004
Wafer-Scale p-Type SiC Single Crystals with High …
2024年6月19日 · Silicon carbide (SiC) single crystals are ideal platforms for fabrication of high-voltage, high-frequency, and high-temperature application devices, showing great potential applications in electric vehicles, …
Crystal structures and the electronic properties of silicon-rich ...
2019年11月1日 · In this work, we have used density functional theory (DFT) to examine the stability of various polymorphs of silicon carbide such as 2H–SiC, 4H–SiC, 6H–SiC, 8H–SiC, …
- 作者: Noura D. Alkhaldi, Sajib K. Barman, Muhammad N. Huda
- Publish Year: 2019
Physical Properties of Silicon Carbide - Fundamentals of Silicon ...
2014年9月22日 · Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications
Silicon Carbide Crystals — Part I: Growth and Characterization
2003年1月1日 · This chapter reviews the growth and characterization of Silicon Carbide (SiC) Crystals. Recent developments in SiC bulk growth and epitaxial film technology have greatly …
Research progress of large size SiC single crystal materials and ...
2023年1月24日 · The crystal growth, defects control, electrical property and corresponding device authentication of N-type, P-type and semi-insulating silicon carbide crystals in Shandong …
Growth and Characterization of Silicon Carbide Crystals …
2010年1月1日 · Two wafers of one 4H-silicon carbide (4H-SiC) bulk crystal, one cut from a longitudinal position close to the crystal's seed and the other close to the cap, were characterized with...
High thermal conductivity in wafer-scale cubic silicon carbide …
2022年11月23日 · We report an isotropic high thermal conductivity exceeding 500 W m −1 K −1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which …
