2022年4月5日 · In this study, fast and selective isotropic etching of SiN x over SiO y has been investigated using a ClF 3 /H 2 remote plasma in an inductively coupled plasma system. The SiN x etch rate...

2009年11月1日 · We achieved SiN film etching with high selectivity using an organic solvent (ethylene glycol dimethyl ether) containing anhydrous hydrogen fluoride. Selectivity as high as 15 was obtained at 80 °C. It was found that anhydrous HF effectively induces high selectivity for SiN relative to SiO 2.

2024年1月10日 · SiN刻蚀：偏chemical etch，能够刻蚀OX的gas都可以对Nit进行刻蚀，只是由于Si-N键能在Si-O与Si-Si之间，选择比可能会不好。一般常用etch gas为：CHF3、CH2F2、CH3F、SiF4、CF4（选择比差）、NF3等（主要也为CF类气体）；

常见Dry etch gas种类、刻蚀材料及相关原理分析. 写在前面： Dry etch gas是plasma 刻蚀的重要气体来源，gas的选择一般遵循两个原则：①能和被刻蚀材料发生反应；②反应的生成物必须是可挥发的。

2023年8月29日 · Highly selective etching of silicon nitride over silicon oxide is one of the most important processes especially for the fabrication of vertical semiconductor devices including 3D NAND (Not And) devices. In this study, isotropic dry etching characteristics of SiN x and SiO 2 using ClF 3 /Cl 2 remote plasmas have been investigated.

• N2 is an important etch product in silicon nitride etching. • Desorption of nitrogen can often be the limiting factor in nitride etching. • The addition of N2 to the plasma etch chemistry can enhance the nitride etch rate. • Dissociated N atoms can adsorb on the activated nitride surface forming N2 as a reaction product.

1999年11月1日 · A highly selective dry etching process for the removal of silicon nitride (Si 3 N 4) layers from silicon and silicon dioxide (SiO 2) is described and its mechanism examined. This new process employs a remote O 2 /N 2 discharge with much smaller flows of CF 4 or NF 3 as a fluorine source as compared to conventional Si 3 N 4 removal processes.

Selective, anisotropic etching of silicon nitride (SiN) over Si or SiO 2 is important for fin field-effect transistor gate fab-rication.1–4 High F-atom generating plasma feed gases, such as CF 4/O 2 or NF 3/O 2, provide isotropic etching rates of 30nm/min for SiN.5 These plasmas are not selective with respect to Si, however.

2021年3月1日 · Using plasma of CH 2 FCHF 2 chemistry, selective etching of SiN against SiO 2 and poly-Si films was achieved for mixing ratios with less than 25% CH 2 FCHF 2 diluted with Ar. Mass spectrometry analysis indicated that the concentrations of key etchants such as CHF 2 + and CHF 2 determined the SiN etching rates.

2016年12月15日 · A quantitative estimation of the chemical bonds found on the surface is obtained by a combination of infrared absorption spectroscopy in ATR mode, X-ray photoelectron spectroscopy, and colorimetry. Si–F bonds are the majority species present at the surface after silicon nitride etching; some Si–OH and a few Si–NH x bonds are also present ...