2019年7月1日 · One of the important tools to characterize the SiN x films is FTIR measurement. It is generally used to get information about the bonding configuration and composition of films. …

hydrogen concentration in SiN x:H films, expressed in bond density ([X-H]) or atomic % hydrogen (at.% H). This technical note provides a brief overview of the Lanford and Rand method for …

In this paper, the deposition of a-SiN x:H films at 50˚C is presented. The effects of power density on the deposition rate, optical bandgap (E opt), and Si–H and N–H bond densities (N Si–H and …

Silicon-rich silicon nitride (SiNX) films have attracted enormous interests due to their promising luminescence properties and well compatibility with current CMOS technique. In this...

Hydrogen effusion measurements have been carried out for a-SiN:H films prepared by plasma enhanced chemical vapor deposition of NH3/SiH4 gas mixture. Additional FTIR measurements …

Figure 1 shows the low frequency range of the FTIR spectrum of as-deposited SiN 1.55 films. The spectrum shows a dominant band centered around 865 cm Ϫ 1 with a small shoulder at 1175 …

2022年12月1日 · Here we study the optical properties of silicon nitride films deposited by three different methods, plasma-enhanced chemical vapor deposition (PECVD), low-pressure …

In this thesis, SiN films grown on Si substrates were characterized using Fourier Transform Infrared (FTIR) spectroscopy. The stress in SiN films can be used to enhance of mobility of …

Silicon nitride (SiN) platforms have shown remarkable properties and, aided by hybrid and heterogeneous integration techniques of III-V materials, can streamline the development of …

2022年8月8日 · Various silicon nitride (SiN) films were prepared using plasma enhanced chemical vapor deposition (PECVD) by tuning deposition condition to control initial hydrogen in the …