Optical property studies carried out in the present work highlight the prospects of SiNx thin films for down shifting, antireflection and as an passivation coating in silicon solar cells.

2025年1月30日 · Predicted critical thicknesses for SiN film cracking, ranging from 200 nm to 4 µm, under varying deposition conditions. Revealed the impact of Si-to-N-rich compositions on stress, Young’s modulus, and toughness of SiN films. Explored substrate temperature and atom bombardment energy effects on SiN film properties, aiding deposition understanding.

2020年12月1日 · In this study, we use a Si target and explore the deposition conditions, and the compositions of the SiN x thin film are confirmed by X-ray photoelectron spectroscopy analysis. The SiN 0.85 thin film shows an initial discharge capacity of 1018 mAh g −1 and capacity retention of 95.4% after 100 cycles, thus exhibiting stable performance.

2025年2月27日 · In this work, we employed orthogonal experiment design to evaluate and optimize the preparation of SiN x thin films via home-made Cat-CVD equipment. The effects of reaction pressure, the ratios of SiH 4 to NH 3 and SiH 4 to H 2, and the substrate temperature on the properties of SiN x thin films were systematically investigated. The response ...

Amorphous non-stoichiometric silicon nitride (a:SiN x) has a wide and diverse range of optical and structural characteristic features based on the stoichiometric variation of silicon/nitrogen content. Such unique features are widely utilized in photonic …

As passivation layer and anti-reflection layer, silicon nitride (SiNx) thin film has been widely used in photovoltaic devices such as solar cells. The structure of SiNx film with uneven thickness distribution can make full use of different wavelengths of sunlight. In this paper, we have studied this structure for the first time.

Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor.

2025年2月27日 · This study focused on developing a method for the preparation of uniform SiN x thin film with a controllable refractive index using home-made catalytic chemical vapor deposition (Cat-CVD) equipment. Orthogonal experimental design was employed to investigate the effects of four key influence factors, including reaction pressure, the ratio of SiH ...

2022年3月21日 · The influence of deposition time (t), RF power (w) and dielectric layer thickness (d) on the thickness gradient of SiNx thin films were studied by ellipsometry. The growth principle of SiNx thin film with thickness gradient was explored, and the control method of depositing SiNx thin films with a certain thickness gradient was obtained.

2024年5月14日 · Substoichiometric SiN x˂1.33 matrix was discovered by an Industrial LF-PECVD reactor. Luminescent Si-Ncs of various size have been synthesized in the SiN x matrix. A simple and repeatable technique is utilized to generate and incorporate rare earth ions (Cerium) into the silicon nitride matrix.