2021年6月23日 · The surface composition/contamination of SiO 2 and Si 3 N 4 films were investigated by XPS (Physical Electronics Instruments) analysis. After deposition or/and …

1993年6月2日 · The surface stoichiometry of SiO x thin films (x = 1–2) has been studied by means of X-ray photoelectron spectroscopy. The presence of three Si oxidation states (SiO 2 , …

在电化学循环过程中SiOx薄膜的结构演化进一步通过XPS测试研究，如图6所示，显示了每个SiOx在第1、5、10、25、50和100次循环后的XPS图谱。 在第一次循环后，如图6a中SiO0.3 …

1998年7月18日 · X-ray photoelectron spectroscopic (XPS) analysis of these films revealed that the main low valency Si state was SiO x (0<x<2) for Si/SiO 2, and Si for Si/Al 2 O 3 and …

1989年8月7日 · X-ray photoelectron spectroscopy has been used to study the chemical structure of stoichiometric SiO thin films. The Si 2p line of silicon binding energy is found at 101.7 eV, …

2021年3月15日 · In this study, we focus on reducing the amount of carbon from UHV chamber inside surfaces via silicon and titanium coatings using a low-pressure inductively-coupled …

2 天之前 · They investigated SiO 2 /Si surfaces with different types of topography with well-known thicknesses of the oxide layer and obtained an impressive similarity of experimental XPS data …

氧化膜与单晶衬底中Si2p光电子谱峰之间的化学位移 (δ)和强度比 (I0x/Isi)随光电子发射角 (θ)的变化明显地偏离理想界面所预期的结果,表明在硅-二氧化硅的界面处存在化学比为SiOx (0yO4-y …

2013年12月1日 · Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al Ka radiation. Survey scans show that the material is primarily …

2025年3月18日 · 3.3 XPS Depth Profiling Analysis of Prelithiated SiO x Electrodes To investigate the chemical composition at different depths of the prelithiated SiO x electrodes, XPS depth …