
Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high ...
2022年5月1日 · In this work, the 2H-SnS 2 and 4H-SnS 2 crystals were successfully prepared by chemical vapor transport (CVT) method. The 2H and 4H polytype structures were confirmed …
Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2
2018年7月5日 · We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS 2 samples by using room temperature low-frequency micro-Raman spectroscopy. …
Structural, optical and magnetic properties of SnS2 …
2020年10月30日 · Here, we report hydrothermal synthesis of SnS 2 nanoparticles using stannous chloride dihydrate and thioacetamide as the precursors without any surfactants and by varying …
Strong interlayer hybridization in the aligned SnS2/WSe2 hetero …
2019年7月24日 · Here, we show strong hybridization effects arising between the constitutive single layers of a SnS 2 /WSe 2 hetero-bilayer structure grown by chemical vapor deposition. …
Single- and few-layer 2H-SnS2 and 4H-SnS2 nanosheets for high ...
The properties of two-dimensional (2D) materials are highly dependent on their phase and thickness. Various phases exist in tin disulfide (SnS2), resulting in promising electronic and …
二硫化锡晶体(99.995%) 2H-SnS2 (Tin Sulfide) - 硫化物晶体
Raman spectrum of a single crystal 2H-SnS2. Measurement was performed with a 785 nm Raman system at room temperature.
SnS2(2H二硫化锡)-上海昂维科技有限公司 - onway-tec.com
2H-SnS2是间接带隙为〜2.2eV的半导体。这些层通过范德华相互作用堆叠在一起,并且可以被剥离成薄的2D层。SnS2属于第14族过渡后金属二硫属元素。 2H相二硫化锡晶体的侧向尺寸约 …
Title: Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2 …
2018年7月6日 · We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS2 samples by using room temperature low-frequency micro-Raman spectroscopy. …
2H-SnS2 (SnS2 2H) Crystal Structure - SpringerMaterials
Explore the CdI2-PbI2 polytype crystalline lattice structure of SnS2 2H with lattice parameters, 3d interactive image of unit cell, cif file, lattice constants & more.
通过低温化学气相传输生长的 SnS2 单晶的化学和结构表征
1991年1月1日 · X 射线衍射表明 2H/4H-SnS2 相在 6-12 个月内转变为单晶 2H-SnS2。 S/Sn 比在厚晶体中为 2.02±0.01,在薄晶体中为 2.01±0.01。 热重/差热分析和其他表征技术显示两种晶 …