
Ultralow thermal conductivity and high thermoelectric figure of …
2014年4月16日 · We attribute the remarkably high ZT along the b axis to the intrinsically ultralow lattice thermal conductivity in SnSe. The layered structure of SnSe derives from a distorted rock-salt...
Polycrystalline SnSe with a thermoelectric figure of merit ... - Nature
2021年8月2日 · Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2–2.6 at 913 K, but more practical and deployable polycrystal...
Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals
2016年12月12日 · The synthesis of n-type SnSe with a ZT value of 2.2 have been achieved by Bi doping in a SnSe single crystal, and the electrical conductivity increased with Bi-doping concentration.
南科大何佳清团队在Science发表SnSe热电材料和器件重要成果
2021年7月9日 · 热电材料性能指标的关键在于能源转换效率,其由材料的无量纲热电性能优值(zt值)决定。 由ZT值的定义式(ZT = (S 2 σ/κ) T)可知,在给定温度T下,高性能热电材料应具有大的温差电动势S(产生大的电压)、高的电导率σ(减小焦耳热损耗)和低的热导率κ ...
Optimization of Thermoelectric Performance in p‐Type SnSe …
2024年12月25日 · Crystalline thermoelectric materials, especially SnSe crystals, have emerged as promising candidates for power generation and electronic cooling. In this study, significant enhancement in ZT is achieved through the combined effects of lattice distortions and band convergence in multiple electronic valence bands.
Data-Driven Enhancement of ZT in SnSe-Based Thermoelectric …
2022年7月19日 · In this study, we present a data-driven approach to improve the thermoelectric performance of SnSe compounds with various doping. Based on the newly generated experimental and computational dataset, we built highly accurate predictive models of thermoelectric properties of doped SnSe compounds.
Lattice plainification advances highly effective SnSe ... - Science
2023年5月25日 · We demonstrated that Cu can fill Sn vacancies to weaken defects scattering and boost carrier mobility, facilitating a power factor exceeding ~100 microwatts per centimeter per square kelvin and a dimensionless figure of merit (ZT) of ~1.5 at 300 kelvin, with an average ZT of ~2.2 at 300 to 773 kelvin.
晶格素化推动了高效的SnSe晶体热电制冷技术 - 知乎
北京航空航天大学 赵立东 教授团队提出了“lattice plainification(晶格素化)”概念,通过降低硒化锡(SnSe)晶格中的空位浓度,大幅削弱了 晶格缺陷 对载流子的散射,实现了载流子迁移率的显著提升。
Tin Selenide (SnSe): Growth, Properties, and Applications
2018年1月8日 · The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b-axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent ...
Ultrahigh Average ZT Realized in p-Type SnSe Crystalline ...
2020年3月25日 · Crystalline SnSe has been revealed as an efficient thermoelectric candidate with outstanding performance. Herein, record-high thermoelectric performance is achieved among SnSe crystals via simply introducing a small amount …
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