2021年9月1日 · The electronic structure and composition of the SnSSe/MGS, SnSSe/CNT, and SnSSe/CNP were characterized by XPS (Figs. 4, S6, and S7). Fig. 4 (a) shows that the main elements in the SnSSe/MGS nanocomposite are carbon, tin, sulfur, and selenium elements.

2019年9月20日 · Surface chemical states of the SnSSe/rGO electrode was assessed by using XPS technology. As shown in Fig. 3 a, the strong C signal derived from the rGO matrix and the Sn, S, and Se signals derived from SnSSe nanosheets are recognized and marked.

X-ray photoelectron spectroscopy (XPS) is considered to be an effective method in the determination of elemental composition. The broadband XPS spectrum of SnSSe is...

2019年4月5日 · XPS analyses confirmed the presence of Sn, S and Se elements on the surface of the film. The bandgap of the films was calculated from the optical transmittance in the visible spectrum, showing direct transitions for SnS and SnSSe at 1.3 eV and 1.12 eV respectively.

2022年10月1日 · In-situ optical microscopy analysis suggests the synthesized effect fundamentally inhibits lithium dendrite growth. The SnSSe modified Cu foil delivers a highly stable Coulombic efficiency over 450 cycles and long cycling lifespan up to 2200 h at 0.5 mA cm −2.

Compared with SnS2 and SnSe2, SnSSe shows high hole mobilities and short relaxation time, resulting in potential applications in photoelectric devices. Here SnSSe is investi-gated for the ultrashort pulse generation in the mode-locked fiber laser. The prepared SnSSe saturable absorber (SA) exhibits a large modulation depth of 56.75%.

The occurrence of Sn-S polytypes was examined using Raman and XPS studies. Annealing causes changes in the optical properties, as observed through optical analysis, which can be attributed to the...

(a) AFM micrographs of SnSSe; (b) height difference between SnSSe and datums; (c) Raman spectrum of SnSSe; (d) XPS spectra of Se 3d, (e) Sn 3d, and (f) S 2p, Se 3p in SnSSe. from...

High-resolution XPS of deconvoluted S 2p for SnS2, (e) valence band spectrum with respect to the Fermi level of SnS 2 and SnSSe, (f) AFM images of SnSSe 2d sheet............................................................2

The GaN/SnS 2 /SnSSe heterojunction showcases a staircase-like (type-II) band alignment and exceptional performance metrics: high photoresponsivity of 314.96 A W −1, specific detectivity of 2.0 × 10 14 jones, and external quantum efficiency of 10.7 × 10 4 % under 365 nm illumination at 150 nW cm −2 intensity and 3 V bias. Notably, the ...