2020年3月3日 · Here, we present ultrabroadband (extending up to 70 THz) THz emission from an Au-implanted Ge emitter that is compatible with mode-locked fibre lasers operating at wavelengths of 1.1 and 1.55...

2013年6月13日 · Ge allows optically efficient photo current generation of e–h pairs for direct transition near the Γ point and shows faster e–h mobility and large optical absorption in the visible/near-IR range.

2024年9月11日 · Intermodal four-wave mixing (FWM) in photonic waveguides offers a promising approach for efficient terahertz (THz) wave generation, crucial for advanced photonic systems. This study explores the potential of germanium (Ge) waveguides, leveraging their distinct dispersion profiles in transverse electric (TE), and transverse magnetic (TM) modes ...

Here, we present ultrabroadband (extending up to 70 THz) THz emission from an Au-implanted Ge emitter that is compatible with mode-locked fibre lasers operating at wavelengths of 1.1 and 1.55...

2024年10月17日 · These ultrathin, flexible, and ultrafast functional metasurfaces pave the way for developing flexible terahertz active meta devices based on nanometric scale germanium films, offering the additional advantage of compatibility with complementary metal-oxide-semiconductor (CMOS) technology in microelectronics.

Abstract—The transmission of intrinsic, antimony-doped, and gallium-doped Ge single crystals in the THz spectral range have been experimentally investigated. It is shown that the attenuation coefficient of intrinsic germanium in the range of 160‒220 μm is at a level of ~0.5 cm‒1, a value comparable with that for silicon.

2019年5月6日 · The transmission of intrinsic, antimony-doped, and gallium-doped Ge single crystals in the THz spectral range have been experimentally investigated. It is shown that the attenuation coefficient of intrinsic germanium in the range of 160‒220 μm is at a level of ~0.5 cm‒1, a value comparable with that for silicon.

Room temperature terahertz (THz) emissions were observed from a single crystalline germanium (Ge) by photoluminescence mechanism. The emission mechanism can be explained by intracenter transition of antimony impurities in n-Ge.

2019年6月19日 · Here, we present ultra-broadband (extending up to 70 THz) THz emission from Au implanted Ge emitter which is compatible with a fibre laser operating at 1.1 and 1.55 {\mu}m wavelengths at a repetition rates of 10 and 20 MHz, respectively.

2024年9月11日 · Intermodal four-wave mixing (FWM) in photonic waveguides offers a promising approach for efficient terahertz (THz) wave generation, crucial for advanced photonic systems. This study explores the potential of germanium (Ge) waveguides, leveraging their distinct dispersion profiles in transverse electric (TE), and transverse magnetic (TM) modes ...