Abstract: An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256 nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported.

Sunday, August 22nd, 2021 A team of researchers, backed by LG Electronics (LG) and the Fraunhofer-Gesellschaft research organisation, claim to have successfully demonstrated a candidate 6G mobile (mobile broadband) technology that was able to use the TeraHertz (THz) band to send data over a record outdoor distance of 100 metres....

Abstract A 25nm InP high electron mobility transistor (HEMT) transistor with excellent yield and uniformity was developed for use with the first ever Terahertz Monolithic Integrated Circuit (TMIC) amplifier. The transistor exhibited 3.5 dB maximum available gain …

Abstract: A new integration concept for terahertz (THz) systems is presented in this article, wherein patterned silicon-oninsulator wafers form all DC, IF, and RF networks in a homogeneous medium, in contrast to existing solutions. Using this concept, silicon-micromachined waveguides are combined with silicon germanium (SiGe) monolithic ...

2024年11月20日 · Abstract: This article presents a compact, broadband, and low-loss monolithic millimeter-wave integrated circuit (MMIC) packaging solution at sub-terahertz (sub-THz) frequencies. This design employs a patterned quartz substrate to realize mode conversion and interconnection between the waveguide and the chip, along with a Chebyshev transformer ...

2016年9月10日 · In this paper, we present our recent progress on InP-based THz MMICs and packaging techniques based on low-temperature co-fibered ceramic (LTCC) technology. The transmitter MMICs are based on 80-nm InP-based high electron mobility transistors (HEMTs).

bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported. The InP DHBT MMIC process is well suited for TMICs due to its high bandwidth (fmax = 808 GHz) and high

In recent years, there has been constant growth in using THz frequencies or mm, sub- mm wavelengths for various applications such as: Astronomy, Atmospheric studies, security, bio-medical imaging. All these applications are now seen more feasible due to rapid enhance- ments of semi-conductor processing technologies.

Sub-THz MMIC switches play a pivotal role in enabling Sub-THz communication systems, advanced imaging and sensing, and instrumen-tation. Optimizing insertion loss, isolation, and bandwidth of MMIC Switches is poised to lead the way in the next frontier of RF applications.

2019年7月15日 · In this Letter, we demonstrate a wireless THz link that is seamlessly integrated into a photonic network, complementing direct O/T conversion at the THz Tx by direct T/O conversion at the THz...