The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. For further information contact your local STMicroelectronics sales office. Table 1. Absolute maximum ratings.

Designed for general−purpose amplifier and low−speed switching applications. See detailed ordering and shipping information on page 7 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device.

tip120由st(意法半导体)设计生产，立创商城现货销售。 TIP120价格参考￥2.06。 ST(意法半导体) TIP120参数名称：类型：NPN；集射极击穿电压(Vceo)：60V；直流电流增益(hFE)：1000；集电极电流(Ic)：5A。

Part #: TIP120. Download. File Size: 45Kbytes. Page: 4 Pages. Description: Medium Power Linear Switching Applications. Manufacturer: Fairchild Semiconductor.

TIP120/D Plastic Medium-Power Complementary Silicon Transistors TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc

TIP120/D TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc

2019年1月8日 · The TIP120 is a NPN Darlington Power Transistor. It can switch loads upto 60V with a peak current of 8A and continuous current of 5A. This makes it suitable for medium and high power electronics like controlling motors, solenoids or high power LEDs. Note: Complete Technical Details can be found at the TIP120 datasheet given at the end of this page.

TIP120 Transistor Datasheet pdf, TIP120 Equivalent. Parameters and Characteristics

Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150 C; TC is variable depending on conditions.

Resistive load switching for PNP type . In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97.