TSMC N2 technology will be the most advanced technology in the semiconductor industry in both density and energy efficiency, when it is introduced in 2025. N2 technology, with leading nanosheet transistor structure will deliver full-node performance and power benefits, to address the increasing need for energy-efficient computing.

2023年4月26日 · TSMC's N2 family will evolve and sometime in 2026, when the company plans to introduce its N2P fabrication technology. N2P that will add backside power rails to N2's Nanosheet GAA...

TSMC N2 technology will be the most advanced technology in the semiconductor industry in both density and energy efficiency, when it is introduced in 2025. N2 technology, with leading nanosheet transistor structure will deliver full-node performance and power benefits, to address the increasing need for energy-efficient computing.

2024年4月25日 · At a high level, TSMC's 2 nm plans remain largely unchanged: the company is on track to start volume production of chips on it's first-generation GAAFET N2 node in the second half of 2025, and...

2024年12月16日 · IEDM 2024大会上，台积电首次披露了N2 2nm工艺的关键技术细节和性能指标：对比3nm，晶体管密度增加15％，同等功耗下性能提升15％，同等性能下功耗降低24-35％。

2025年2月13日 · TechInsights and SemiWiki have published key details that Intel and TSMC disclosed about their upcoming 18A (1.8nm-class) and N2 (2nm-class) process technologies at the International Electronic...

2022年7月16日 · 台积电N3的官方量产时间是2022年下半年，但是受限于产能和良率等因素，最早也要2023年才看到，实际进度会和N5节点的N4P差不多，大约也会比Intel 4略微那么快一点出现。 N3是台积电的末代 FinFET 工艺，也会是各家工厂里实际密度最高的FinFET工艺。 可能是受到Intel 给10nm的第二版起名SuperFin的启发，台积电这回也给N3增加了一个营销上的名头，FINFLEX。 其实整个FINFLEX也没什么太特别的地方，只是给N3的不同密度库版本做了一 …

2024年5月22日 · TSMC's N2 will be TSMC's first production node to use gate-all-around (GAA) nanosheet transistors and this will significantly enhance its performance, power, and area (PPA) characteristics.

2024年12月12日 · TSMC described its next generation transistor technology this week at the IEEE International Electron Device Meeting (IEDM) in San Francisco. The N2, or 2-nanometer, technology is the semiconductor foundry giant’s first foray into a new transistor architecture, called nanosheet or gate-all-around.

在其 2022 年技术研讨会上，台积电正式公布了其 n2（2 纳米级）制造技术，该技术计划于 2025 年某个时间投入生产，并将成为台积电第一个使用其基于纳米片的栅极全方位场效应的节点晶体管（gaafet）。