2017年1月17日 · Creating reliable TSVs with high throughput can be a challenge, but with the right electroplating materials, the challenge can be overcome. This tutorial examines the concept of copper through silicon via electroplating, which can increase reliability and decreases cost of subsequent process steps.

硅通孔 技术，英文全称：Through-Silicon Via，简写： TSV，即是通过在芯片和芯片之间、晶圆和晶圆之间制作垂直导通，实现芯片之间互连的技术，是2.5D/3D 封装的关键工艺技术之一，同时还有一先进封装工艺技术就是： 玻璃通孔 （TGV），今天我们主要跟大家分享的是：硅通孔（TSV）工艺技术。 通过垂直互连减小互连长度、信号延迟，降低电容、电感，实现芯片间低功耗、高速通讯，增加带宽和实现小型化。 硅通孔（TSV）工艺技术是 晶圆级多层堆叠 技术中有 …

2020年4月14日 · TSVs allow direct signal routing vertically between chips as opposed to routing to the periphery and wirebonding to an interposer or printed circuit board. This vertical routing results in shorter electrical path lengths, which translates to reduced electrical parasitics such as resistive-capacitive (RC) delay time delays.

TSV plating is a key to the 3-D electrical interconnection, whereas the prewetting process is one of the important factors that can decide the filling depth and quality of the TSV plating. In this paper, a new three-step prewetting process with high efficiency and low cost is developed and includes absolute ethanol infiltration, deionized water ...

2015年3月5日 · Through-silicon vias (TSVs) are electrical interconnects that are etched into a silicon wafer. TSVs can also be referred to as through wafer vias [1]. The primary benefit that comes from the use of TSVs is reduced interconnect length with short vertical connections through thinned silicon die.

2012年8月1日 · TSV plating is a key to the 3-D electrical interconnection, whereas the prewetting process is one of the important factors that can decide the filling depth and quality of the TSV...

Years of experience and success in electroplating damascene copper have helped DuPont Electronics & Industrial bring leading-edge copper through silicon via (TSV) chemistries to the advanced packaging market. Our production-proven, three-component copper solutions enable even the most challenging TSV aspect ratios due to: High purity copper

Abstract: We propose a new TSV fabrication process using electroless plating of a barrier metal layer in TSV, and succeeding direct electroplating of Cu on the barrier without Cu seed layer. The conformal and thick ( > 50 nm) CoWB barrier layer deposition inside a high aspect ratio TSV enables direct electro-plating of Cu from top to bottom of ...

2024年11月21日 · 硅通孔技术，英文全称：Through-Silicon Via，简写：TSV，即是通过在芯片和芯片之间、晶圆和晶圆之间制作垂直导通，实现芯片之间互连的技术，是2.5D/3D 封装的关键工艺技术之一，同时还有一先进封装工艺技术就是：玻璃通孔（TGV），今天我们主要跟大家分享的是：硅通孔（TSV）工艺技术。 通过垂直互连减小互连长度、信号延迟，降低电容、电感，实现芯片间低功耗、高速通讯，增加带宽和实现小型化。 硅通孔（TSV）工艺技术是晶圆级多层堆叠 …

We studied electroplated Cu filling in TSV hole by changing additive conditions on ELP barriers to obtain better Cu filling properties in TSVs. We successfully observed excellent Cu filling by the choice of Co alloy ELP barrier and the Cu plating bath composition for TSVs with a …