The TaN bare substrate (red line) XPS spectrum shows peaks at binding energies around 230.4 eV and 242.5 eV, which are distinctive of the 4d 5/2 and 4d 3/2 states of partially oxidized TaN, such...

X-ray photoelectron spectroscopy (XPS or ESCA) curve fitting procedures, reference materials and useful notes are listed here to provide a starting point for the consistent interpretation of XPS spectra. These reference pages contain tips and techniques that are designed to help both the novice and advanced XPS user.

Ta4f region has well separated spin-orbit components (Δmetal=1.92eV). Loss feature for Ta metal appears at ~33eV and ~38eV for Ta 2 O 5. Peaks in the Ta4f region have an asymmetric peak shape for tantalum metal. Tantalum compounds, such as the oxide, have symmetric Ta4f peaks.

XPS 光谱解读. Ta4f 区域具有明显的自旋轨道分裂峰 (Δ 金属 =1.92 eV)。 钽金属在约33 eV处出现能量损失特征峰，Ta 2 O 5 在约38 eV处出现能量损失特征峰。 钽金属的 Ta4f 区域峰形不对称。 钽化合物（如氧化物）的 Ta4f 峰形对称。

Ta4f region has well separated spin-orbit components (Δmetal=1.92eV). Loss feature for Ta metal appears at ~33eV and ~38eV for Ta 2 O 5. Peaks in the Ta4f region have an asymmetric peak shape for tantalum metal. Tantalum compounds, such as the oxide, have symmetric Ta4f peaks.

The heavy transition metal tantalum (Ta) offers a wide range of applications, especially in the field of electronics, e.g. Ta capacitors with a comparatively long life-time.

2009年1月1日 · After 7 min of ion bombardment no clear Ta 4f 7/2 and Ta 4f 5/2 peaks are observed, instead there is a broad peak that represents the presence of different Ta suboxides. As the ion bombardment proceeds upto 12 min, two clear peaks emerge out of the broad peak at binding energies of 22.5 and 24.5 eV at higher binding energy side.

For understanding the composition and chemical bonding states of the prepared TaO x /HfN x films, which may be the critical factors for devices to show good RS behaviors and give clues to probe the...

2021年10月1日 · In XPS study, from the analysis of Ta 4f and B 1s core level spectra of annealed films, it is observed that B has diffused out of the CoFeB layer and reacted with Ta to form TaB and BO x.

通过X射线光电子能谱（XPS）和近边缘X射线吸收精细结构（NEXAFS）光谱研究了Ar + 离子溅射过程中非晶Ta 2 O 5 的电子和原子结构的演变。通过特别注意从Ta 4f光谱中减去非弹性散射电子本底，通过光谱分解对XPS Ta 4f光谱进行了分析。